light emitting devices 中文意思是什麼
light emitting devices
解釋
光發射裝置-
Organic electroluminescent devices ( oleds ) have aroused many scientists " interests because of their potential adventages in low - power, emissive, flexible, cost - competitive, flat panel displays. red, green and blue light - emitting devices are readily avaible
有機薄膜電致發光器件具有驅動電壓低、發光效率高、制備容易、可製成大面積的平板顯示器以及顏色豐富等特點，已引起各國科學工作者的廣泛關注。 -
It shows high potential on light - emitting devices, photodetector, optoelectronic devices and sensor
結果表明，摻鋁樣品引入了新的缺陷，發光強度增強。 -
Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied
氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。 -
Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology
硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。 -
Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices
由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。 -
It has high exciton binding energy of 60 mev, which ensures efficient uv emission from the exciton and make it suitable for uv laser - emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching
Zno不僅是繼gan之後紫外發射材料研究的又一研究熱點，而且近年來zno薄膜作為ito薄膜的很有發展前景的替代材料，正引起人們日益廣泛的關注。 -
Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic
多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。 -
These devices include light - emitting diode, laser diode, uv - detector, mesfet, hemt, modfet etc. since 1990 ' s, on the basis of advanced techniques of materials preparation, gan - based leds and lds were achieved successfully, and leds on sapphire substrates have already been commercialized
九十年代以來，在先進制備技術的基礎上， gan基leds和lds分別研製成功，其中藍寶石襯底上的leds已經進入了商品化。 gan基微電子器件也得到了廣泛的關注，取得了一定的研究進展。 -
With strong fluorescence lppp showed a broad pl and el emission with a maximum at 560nm and was regarded as a white light emitter with a strong blue component, thus allowing tunability over the full visible region. the enhanced light - emitting devices were fabricated. microcavity effects were observed both in el and pl
熒光效率高，並具有從紫外到近紅外十分寬闊的光致和電致發光光譜，最大峰值在560nm左右，是一種具有較強藍光成分的白光發光材料，允許在整個可見光范圍內進行調諧發光，可作為高穩定的發光材料。 -
Researchers investigating how the scales work found that they have many similarities to digital devices known as light emitting diodes, also known as leds, which are found in everything from computer and television screens to traffic lights
研究者的研究發現該微結構的工作方式與稱之為發光二極體（或led ）的數字元件有著太多太多的相似，從計算機和電視屏幕到交通燈發光二極體隨處可見。 -
Phosphorescent electroluminescent materials and devices are one of prime focuses of organic light - emitting device research in recent years due to their ability to efficiently utilize both singlet and triplet excitons and having higher efficiency
有機電致磷光材料可以同時利用單線態和三線態激子發光，具有發光效率高等優點，成為近年來研究的熱點。 -
Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching
氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。 -
The applications of organic semiconductor as active layers in light - emitting devices offer several prominent advantages such as high efficiency, high brightness and low cost. another advantage is that the emitting wavelength can be chemically tailored due to the band gap
有機半導體微腔調諧發光器，發射光波長可通過分子設計調節，在紫外到紅外的波長范圍內可調，實現全色光發射，受到人們的重視。 -
Porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( oeic ), opening up the bright future for the very large integrated circuit ( vlic )
多孔硅可在近紅外和可見，甚至在近紫外光區輻射強烈的熒光，使得它可用來製造發光器件，並可望能用來解決光電子集成電路的關鍵問題，為製造帶有光源的大規模集成電路?光電集成方面開辟新的途徑。 -
Influence of hole buffer layer cupc on properties of organic light - emitting devices
效應及氮在其中的作用 -
This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices
本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。 -
Recently, organic semiconductor light emitting has attracted a great deal of attention due to future applications in large area light emitting devices and displays
用有機半導體材料制備的發光器件具有高效率、高亮度、全彩色、低成本等突出優點，在大屏幕固體平面顯示等方面有廣闊的應用前景。 -
However, fc derivatives could not be used as functional molecules directly in many high - tech fields such as nonlinear optics, light emitting devices, sensors and so on. only when they are organized with some structure or dispersed homogeneously into solid matrix to form functional material, their function could be fully brought into play
在許多領域，如非線性光學、發光器件、傳感器等，二茂鐵衍生物並不能直接應用，但將具有光電活性的二茂鐵基團引入到兩親分子中，形成特定性能的成膜分子，就能真正發揮其作用。 -
An authority on organic light - emitting devices to deliver a william mong distinguished lecture at hku the third of the 2006 william mong distinguished lecture series will feature professor fred c h chen to speak on organic light - emitting devices technology oled
2006年香港大學港大工程學院蒙民偉傑出學人講座系列第三講將由有機發光二極體organic light - emitting devices權威陳金鑫教授主講。
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