plasma reaction 中文意思是什麼
plasma reaction
解釋
等離子體反應-
Method : by laser ablating a multiphase reaction system, various products are obtained by plasma reaction
以脈沖激光濺射多相反應體系，變換固體靶和氣相、液相反應物的不同組成，合成得到不同產物。 -
The j x b force shoots the plasma out of the rocket, and the ensuing reaction force accelerates the rocket.
JXb的力將等離子體拋離火箭，由此產生的反作用力就加速火箭。 -
Reaction of human plasma nerve growth factor to radiofrequency catheter ablation
人血漿神經生長因子對射頻消融的反應 -
The addition of aluminum sulfate caused the chemical shrinkage of cement mortar to reduce a little, but induced net plasma self - shrinkage to grow into expansion. that reason was that ettringite was produced by reaction between aluminum sulfate and hydration products
硫酸鋁摻入水泥中，可以使水泥漿的化學收縮有少量的減少，但可以使水泥凈漿的自收縮改變為膨脹效應，這是因為其與水泥水化的生成物反應生成了鈣礬石。 -
The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules
結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。 -
Abstract : it has been discovered that the coke formed in ch4 coupling under plasma can be eliminated via pure h2 discharge in the system. eliminating coke under plasma with positive or negative high voltage in dc electric field has been compared with that in ac field. the elimination of coke takes place only on the negative of the two electrodes in dc field, while on both electrodes in ac field. the coke on the reactor walls can be eliminated with either positive or negative high voltage and in either dc or ac field. based on the experimental facts, hypotheses of the reaction mechanism are suggested. quantity of eliminating coke depends on diametrical ratio between reactor and the electrode, input power and electrode materials
文摘:發現了等離子條件下甲烷偶聯反應中形成的積炭可以通過該體系中純氫氣放電而消除.將消除積炭使用直流電場的正高壓和負高壓與使用交流電場作了比較，發現直流電場中無論使用正高壓還是負高壓，只有陰極上的積炭可以被消除，而交流電場中兩極積炭均可被消除，反應器壁上的積炭在以上任何情況下均可被消除.基於實驗事實提出了機理假設.消除積炭的量與輸入功率、反應器對電極的直徑比以及電極材料有關 -
Studies on piezoelectric immunosensors based on plasma - polymerized film. ( abstract ) the piezoelectric immunosensors posses high sensitivity of response to mass and high specificity of bio - chemical reaction as well
壓電免疫傳感器具有壓電質量響應的高靈敏性和生化反應的高特異性，在生物傳感器的研究中日益受到重視。 -
The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。 -
Low temperature plasma has been extensively investigated for catalyst preparation, including plasma chemical synthesis of ultra - fine particle catalysts, plasma regeneration or plasma treatment of catalysts, plasma - assisted deposition of catalytically active compounds on carriers and combination of plasma and catalyst in reaction system
摘要低溫等離子體技術在化學生產中的用途越來越廣泛，它在催化劑領域的應用主要表現在以下幾個方面：超細顆粒催化劑合成，催化劑再生，催化劑表面處理，活性組分沉澱到基體以及低溫等離子體系統中添加催化劑。 -
In this article, constituting some the equations which reflect the flow law and building and applying many mathematical models of physical and chemical reactions in the the plasma ignition : applying k - two equations turbulence model to calculate the turbulence parameter supplying simplied reaction systerm model and applying eddy break - up model and p - i thermal radiation model. with these reasonable simplied modles, numerically simulating the flow field in the plasma ignition. during the numerical simulation, applying the body - fitted coordinates for the complex geometry of the computional field ; using the mixing format to disperse the equations ; applying simplec algorithm method to solve the equations ; using above models and methods, it can get flow field distribution ; including temperature, pressure, turbulent kinetic energy and its dissipation rate, turbulent viscosity, velocity, density. these results are significant to design and improve the plasma ignition
本文旨在通過構造反映等離子點火器內部流動規律的基本方程組，建立描述等離子點火器內部的復雜物理化學過程機制數學模型：模擬等離子發生器內部燃燒的-雙方程湍流流動模型；模擬氣體燃料在燃燒時中化學反應的簡單化學反應系統模型；模擬等離子點火器內部湍流預混燃燒的漩渦破碎模型；模擬等離子點火器高溫燃氣及其壁面的p - i輻射換熱的模型等等，對模型進行一定的合理的簡化，然後數值模擬等離子點火器內部流場的流動。 -
Result the result of the first part : 1. immunocytochemistry reveals that breast cancer cells of t47d and mda - mb - 231 have positive reaction. positive particles position cell membrance and cell plasma respectively
結果：第一部分結果：天津醫科大學碩士學位論文中文摘要1 .免疫組化顯示: t47d陽性，陽性反應物定位於胞膜和胞漿。 -
Using metal for reaction material, sno2 and tio2 nano - powders were obtained through dc transferred arc plasma with purity more than 98 % and average size of particle being l00nm and 60nm, in the same time the particle size could be adjusted according to the cooling medium
用直流電弧等離子體「蒸發?凝聚法」以金屬塊體為原料，制備出了純度大於98平均粒度分別為100nm和60nm的sno _ 2及tio _ 2納米粉末，並且粉末的粒度可以通過調整冷卻介質來加以控制。 -
The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。 -
The j x b force shoots the plasma out of the rocket, and the ensuing reaction force accelerates the rocket
J x b的力將等離子體拋離火箭，由此產生的反作用力就加速火箭。 -
We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device, and improved the inputting method of reaction gases, then had executed a diamond film growth system. the advantages of our system are : ( 1 ) reaction power, which can enhance the density of the plasma in the reacting region, is supplied with the heat filament and the dc electric field, or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other
將熱絲cvd技術與pecvd技術相結合，在薄膜的成核和生長階段分別給反應區再施加一個直流和射頻電場，同時改進反應氣體的進氣方式，製成具有下列兩大特點的金剛石薄膜生長系統： （ 1 ）反應功率由熱絲和直流電場或熱絲和射頻電場共同提供，兩者互相補充，可精確控制，大大提高了反應區的等離子體密度； （ 2 ）能精確控制反應氣體的分佈、流量及流速。 -
Transfusion - related acute lung injury ( trali ) is a severe reaction between leukocyte antigen and antibody during transfusion of plasma - containing components
摘要與輸血有關的急性肺損傷，是在輸含有血漿的血液的時候，白血球抗原與抗體發生嚴重的反應所造成。 -
Results showed that igm, after 3 days of inoculation, reached to the highest level ( 0. 57mg / ml ), which indicated some of the plasma cells have produced igm. igg after the 10 day of inoculation, had a trend of increasing and reached to the highest level at 20 th day ( 5. 05 mg / ml ). it indicated that igm, the immune globulin produced from the earlier reaction, play active role against the aev - nh937 strain infection at the beginning of the disease
實驗結果為igm在攻毒后第3天達到峰值（ 0 . 57mg / ml ） ，說明已有一部分b淋巴細胞分化為漿細胞並產生igm ； igg從第10天開始呈上升趨勢，在第20天達到峰值（ 5 . 05mg ml ） ；感染雞外周血清中先出現igm ，后出現igg ，說明igm為初級反應最早出現的免疫球蛋白，在感染早期起著先鋒免疫作用。 -
The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and watercooled stainless steel reaction chamber in 2450mhz / 5 kw
詳細介紹了自行研製的2450mhz 5kw帶有石英玻璃窗、水冷卻不銹鋼腔體微波等離子體化學氣相沉積（ mpcvd ）裝置。 -
The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel reaction chamber in 2450mhz / 5 kw
本文詳細介紹了自行研製的2450mhz 5kw帶有石英玻璃窗、水冷卻不銹鋼腔體微波等離子體化學氣相沉積（ mpcvd ）裝置。 -
Theoretical study of reaction paths and transition states on conversion methane into c2 hydrocarbons through plasma
甲烷等離子體轉化合成碳二烴反應過程和過渡態理論
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