selected area electron diffraction 中文意思是什麼
selected area electron diffraction
解釋
選定區電子衍射- selected : adj. 挑選出來的；精選的。
- area : n. 1. 面積；平地；地面。2. 空地；〈英國〉地下室前的空地。3. 地區，地方；〈比喻〉區域；范圍。
- electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
- diffraction : 分解
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Selected area electron diffraction image
選區電子衍射象 -
Method of selected area electron diffraction for transmission electron microscopes
透射電子顯微鏡選區電子衍射分析方法 -
Saed ( selected area electron diffraction ), hrem ( high resolution electron microscopy ) and eds ( energy dispersive spectrum ) experiments confirmed that both the porous layer and lamellar layer are composed of nano - crystalline ha ( hydroxyapatite )
實驗中採用了選區電子衍射、高分辨觀察和x - ray能譜等實驗手段，分析了羥基磷灰石各層的形態、成分與微結構。 -
More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3
利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。 -
The transmission electron microscopy ( tem ) images show that ceo2 nanowires are about 60 nm in diameter, which correspond to the pore sizes of the membranes used. the selected - area electron diffraction ( saed ) pattern indicates that the nanowires selected are single crystals
從透射電鏡（幾瑪圖像可以得知ceo :納米線直徑大約60nln ，與所用膜的孔徑相符，電鏡選區衍射（ saed ）顯示所選的ceo :納米線為單晶結構。 -
Nanostructured bi2s3, cds and zns semi conductors with different sizes and morphologies were synthesized using hydrothermal, solvothermal and liquid - phase method at low temperature through changing reaction conditions. the products were characterized by x - ray diffraction ( xrd ), transmission electron microscopy ( tem ), selected area electron diffraction ( saed )
本文利用水熱、溶劑熱等液相法，在低溫下通過改變反應條件制備了不同尺寸和形貌的bi _ 2s _ 3 、 cds和zns納米結構半導體材料，利用xrd 、 tem 、 saed等測試手段對每一種材料進行了表徵和分析。
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