soi technology 中文意思是什麼

soi technology 解釋
絕緣體上硅技術
  • soi : 硅絕緣體
  • technology : n. 1. 技術，工程，工藝。2. 製造學，工藝學。3. 術語（匯編）。
  1. In this paper, the research of the dielectric isolation of over - 20 m - film soi is concentrated on the structure, technology and experiment

    論文對硅膜厚度大於20 m的soi介質隔離問題從結構、工藝和實驗三個方面進行了深入研究。
  2. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  3. They are usually applied to optical signal distribution systems. such as cable television, broadcasting systems and pon systems. in this thesis, y - branch and multimode interference in soi technology are studied and simulated

    因為它在光通信系統、光纖用戶網、光纖catv 、光無源網路（ pon ） 、光局域網等領域中被廣泛應用。
  4. It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect

    基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。
  5. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  6. Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet

    本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。
  7. A gigaprocessor incorporating 0. 18 - micron copper and soi silicon - on - insulator technology, the power4 is the single most powerful chip on the market today

    採用0 . 18微米的銅和soi （絕緣硅）技術， power4是目前市場上單個晶元功能最強大的晶元。
  8. For the first time, an integrated waveguide turning mirror ( 1wtm ) in soi was put forward and realized. using anisotropic etching technology with koh solution, the mirror surface was very smooth with root square roughness only 5. 19nm, and the mirror was vertical to the wafer surface because of the crystalline relationship

    論文首次設計並製作了soi上集成波導式轉彎微鏡（ iwtm ） ，利用硅的koh各向異性腐蝕特性製作出的微鏡表面非常光亮，均方根粗糙僅為5 . 19nm ，並且由於鏡面是腐蝕出的晶面，其與晶片表面非常垂直。
  9. Soi technology is one of the important mainstream integration technologies

    Soi技術是21世紀重要的主流集成技術之一。
  10. This article is mainly about the sige hetrojunction mos device fabricated by soi technology

    本論文主要介紹的是基於soi技術的sige異質結mos器件。
  11. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  12. Abstract : according to the daga of crops yield and soil fertility changes of long term application of fertilizer and nutrients recycling obtained from ecological stations scatrtered in four typical areas under chinese academy of sciences and state minisetry of science and technology, the circulation ratios of organic carbon, phosphorus and nitrogen in the process of feeding - composting in were put forward in the agricultural system of black soi area, the ratios were about 0. 3, 0. 61 and 0. 49, respectively

    文摘:根據中國科學院和國家科技部分佈於四大類型地區的生態站進行的長期施肥及養分循環再利用的作物產量、土壤肥力質量變化研究數據，提出了黑土區農業系統投料中有機碳和磷、氮在飼養? ?堆腐過程中的循環率。
  13. Cmos electronics on silicon - on - insulator ( soi ) wafers has emerged as the microelectronics technology in the 21st century for low - power high - speed applications

    Soi （ silicon - on - insulator ）材料由於其在低功耗、高速cmos器件方面的應用，被稱為「二十一世紀的硅基礎電路技術」 。
  14. As the development of soi ( silicon on insulator ) preparation technology and the decrease of soi material ’ s cost, it provides a wider space for the exploitation of high - performance hvic based on the flexibility material structure and the complete dielectric isolation technology

    隨著soi （ silicon - on - insulator ）材料制備技術的日益成熟和成本的降低， soi技術以其獨特的材料結構和全介質隔離技術為高性能soi基hvic的開發提供了廣闊的空間。
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