soi substrate 中文意思是什麼
soi substrate
解釋
絕緣體上硅結構襯底-
Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect
這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。 -
The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。 -
The paper is to propose a novel soi high - voltage structure and to design a soi power switch ic based on epitaxial simox substrate for an institute, which will be used on firing controlling system
本文目的是為某軍工電路研究所設計，應用於某軍工系統研究所的火炮控制系統的soi高壓器件及功率開關集成電路。 -
It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect
基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。 -
We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。 -
On the research of soi power switch ic, we proposal the devices based on epitaxial simox substrate
本文同時對基於該結構和屏蔽槽結構的soi高壓復合結構進行了研究[ 2 - 4 ] 。 -
The combiner is fabricated on a silicon - on - insulator ( soi ) substrate
在一個絕緣體上硅的基板上實現了該器件。 -
According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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