substrate layer 中文意思是什麼
substrate layer
解釋
襯底層-
4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate
4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。 -
It set up the development of the world recognized high performance nanofiltration composite membrane of aromatic polyamide, on the basis of reviewing the development, the importance in the membrane separation technology, the classification, the fabrication technique and the current development of the research and the application of the nanofiltration membrane. polysulfone was chosen as the material for making the porous substrate because of its excellent compress - to - denseness resistance, its cheap price and its great availability. by fabricating an ultra thin polyamide functional layer on the polysulfone substrate through interfacial polymerization taking piperazine as the monomer in aqueous phase and trimesoyl chloride as the monomer in organic phase, high performance nanofiltration composite membranes of ultra low pressure and ultra high permeating flux were prepared
選擇耐壓密性能優良，價廉易得的聚碸材料為制備復合膜基膜材料，哌嗪為水相單體，均苯三甲酰氯為有機相單體，通過界面聚合反應在基膜表面形成超薄功能層，制備了超低壓高通量聚哌嗪均苯三甲酰胺聚碸納濾復合膜，以0 . 1 mgso _ 4溶液為測試液，所得高脫鹽平板復合膜（ ）在0 . 4mpa下，脫鹽率為96 . 1 ，通量達85 . 2l -
The thickness of the silver plating layer is in the range of 0. 2 m ~ 0. 5 m. through dta, it is proved that the metal plating layer is compatible with the substrate very well. the research on the testing of the complex decoy ' s properties is detailed below
該文還重點分析了影響鍍層導電性的因素；確定了鍍銀層厚度大致范圍在0 . 2 m 0 . 5 m ；通過差熱試驗，證實了鍍層金屬與基片是完全相容的性質。 -
The particles distributed hi the matrix of grey cast iron, but some contact each other. the composite layer extend gradually into the substrate. when volume fraction of wc is 36 wt % and 27 wt %, the matrix of the composite is high chromium cast iron, consist of white carbide bars and the austenite. wc particles distributed uniformly, retaining approximately quondam granular form in the composite layer which has an evident interface area with the substrate, with good bonding strength
對不同碳化鎢體積分數的灰鐵和低鉻鑄鐵基復合材料的微觀組織結構分析表明：碳化鎢體積分數為52時，復合層內基體為灰口鑄鐵組織，顆粒直接分佈在灰鐵基體上，部分碳化鎢顆粒有相互接觸的現象，基材與復合層之間沒有明顯的過渡；碳化鎢體積分數為36 、 27時，復合層內基體為高鉻鑄鐵，由面塊狀的奧氏體和白條狀碳化物組成，碳化鎢顆粒表面固溶於基體組織中，粒形基本保持完整，分佈均勻，與基體構成冶金結合，基材與復合層之間存在一個明顯的平緩過渡區。 -
Finally, a chebyshev function bpf with siw resonator was designed and realized by ltcc with 12 - layer substrate. a high performance elliptic function bpf with siw resonator was designed
在分析ltcc集成高q濾波器實驗結果的基礎上，設計了一個基於siw技術的9層基片的高性能的橢圓函數濾波器。 -
The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。 -
The love wave device with the substrate of st - cut quartz and the guiding layer of si02 was used as the saw biosensor. dna sensor employing synthetic seb dna probe as a molecular recognizing component was utilized to detect seb by measuring seb dna in samples
該傳感器採用以st一切割的石英晶片為基體，以510 :為波傳導層的樂甫波（ lovewaves ）裝置，利用具有分子識別功能的dna合成探針來實現對樣品中sebdna的檢測。 -
In the theoretical description of grazing emission fluorescence, the mode of fluorescence intensity emitted from layered materials dependence of grazing angle is established by applying asymptotic approximations to double fourier integrals, and the theoretic calculation formula of fluorescence intensity from a thin layer is derived. by the derived expressions, the theoretic simulation curves of several thin layers on si substrate are calculated. in the experimental setup, the requirement of construction of the setup and some important parameters are brought forward
最後，利用平穩位相方法建立了掠出射情況下薄層樣品產生的熒光強度和掠出射角的對應關系數學模型，推導了薄層樣品熒光強度理論計算公式，並以此為依據模擬計算得出了cr 、 fe 、 ti和ni等幾種以si作基底的單層薄膜樣品的熒光強度隨掠出射角變化的理論曲線。 -
2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm
根據x射線光電子能譜，計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ，接近理想化學配比1 ；立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。 -
For the preparation of coated conductors, one of the most important issues is the growth of seed layer ( the first buffer layer ), which provide a continuous, smooth, and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer
在二代塗層導體中，第一層過渡層（也稱為種子層）起著順延織構和阻擋基帶與超導層之間互擴散的重要作用，因此，種子層是塗層導體制備的關鍵。 -
Beginning with a glass substrate, different materials are deposited layer by layer
製作過程要將組成的材料蒸發，然後凝結在基板上。 -
We research on the thermal buckling characteristics of double layer membrane which is composed of different materials with different thermal expansion coefficiens under uniform temperature elevation. the energy method is proposed which is used to solve the problem and the symbolic relation between central buckling height and substrate height under small buckling height is also given. it is the primary theory of membrane resonant sensor, which makes the research and development of novel thermal sensor possible
本文對微機械中熱脹系數不同的材料構成的雙層復合薄板在均勻溫升下的撓曲特性進行了研究，提出了在均勻溫升下雙層薄板熱撓曲求解的能量法，並給出了小撓度下中心撓度與板厚的解析關系，為薄膜諧振式傳感器溫度特性的研究和新型溫度傳感器的設計與開發打下了基礎 -
Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc, on which an amorphous transition layer develops, finally an well ordered film is obtained, " card - packing ", " amorphous accumulation " and " brick - stacking " are adopted hi three different layers
Znf _ （ 16 ） pc分子在石英襯底上的生長基本符合stransky - krastanov模型：通過f -原子與石英襯底的強相互作用形成奠基層，發展成無定型的過渡層，最後形成有序的結晶層。在這三個區域內分子分別採取「 card - packing 」 、 「 amorphousaccumulation 」和「 brick - stacking 」排列方式。 -
A patch antenna with air holes in the substrate has been designed. the finite - difference time - domain ( fdtd ) method together with the perfectly matched layer ( pml ) boundary treatment has been used to study the performance of the antenna. it is shown that the surface waves are significiently suppressed, the frequency bandwidth is improved, the sidelobe levels are reduced and consequently the gain in the forward direction is improved by 14 db ( about 4 db higher than the value reported previously )
設計了一種基底鉆周期圓孔結構的電磁（光子）晶體貼片天線，用fdtd方法並結合pml吸收邊界條件對該天線進行了研究，結果表明本文所設計的基底鉆孔型電磁晶體貼片天線取得了多方面的性能改善，與普通天線相比，基底中的表面波受到很大抑制，天線的帶寬增加，遠場方向圖上天線的旁瓣和背瓣被明顯削弱，向前輻射的增益由原來的12db增加到26db ，增加了14db ，比文獻上報道的gonzalo等人的研究結果提高了4db 。 -
"pattern transfer" refers to the transfer of a pattern, defined by a masking layer, into a film or substrate by chemical or physical methods that produce surface relief.
「圖形轉移」是指把掩膜層所確定的圖形通過能產生表面轉移的化學或物理方法轉移到薄膜上或襯底上去。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
The results showed that the friction factor of bn film was about half of that of the steel based materials, and the cohesion between film and substrate could obviously be increased by the ni - p interface layer
結果表明：氮化硼薄膜的摩擦因數約為鋼基材料的一半，中間層鎳磷合金的加入使薄膜結合力顯著提高。 -
3. by using the shack - hartmann wavefront sensor, the thermal distortion of the substrate, the single - layer dielectric thin films with different thickness, and the multilayer dielectric thin films with different multilayer thin films ( ybf3 / znse ) irradiated by co2 laser were studied experimentally. 4
3 .利用夏克一哈特曼波前傳感器，對基底樣品以及不同厚度的介質單層膜樣品和不同膜系的ybf3 / znse介質多層膜樣品在c02激光輻照下的熱畸變進行了實驗研究。 -
As an initial stage on the process of foamed nickel preparation, a layer with low phosphorus content nickel deposit is applied on polyurethane foam substrate as a conducting layer
在制備泡沫鎳材料的過程中，首先要求在聚氨酯海綿基體上低磷化學鍍鎳制備導電層。 -
The percolation process of wsps is taken as a unit, and a simplified contamination percolation process combined functional model is put forward, in which includes four layers as bottom sludge layer, substrate layer
把穩定塘中污染質的下滲過程看作一種單元系統，提出了概化的穩定塘中污染質下滲單元耦合功能模型，對各功能層的功能進行了描述。
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