substrate resistivity 中文意思是什麼

substrate resistivity 解釋
基板電阻率
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  • resistivity : n. 抵抗力；抵抗（性）；【電學】電阻率；電阻系數，比阻。
  1. We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations. expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect. using double exchange model of zener these results can be explained qualitatively

    27歐姆厘米，轉變溫度是78與154開爾文，磁場強度為7t時，磁阻率為習3及巧6 x結合雙交換模型和不同的應力作用，逐一解釋了產生差異的緣由，其中我們也討論了具有）取向的la 。
  2. The loss of coplanar wave - guides ( cpws ) on ps / ops layers with thickness about 10, and 70um respectively on low - resisitivity ( o. olflcm ) si has been studied, which are expected to increase the substrate resistivity and then to reduce its effective dielectric loss under the microwave operation

    01隻cn : ） _ l生長的多孔硅/氧化多孔硅厚膜為襯底制備的共平面波導（ cpw ）的微波插入損耗特性，其介質膜的厚度分別是10腳和70腳。
  3. Many approaches have been proposed to achieve better rf / microwave performance of passive elements on low - r si substrates. the use of high - resistivity ( > 3000q. c / ? silicon substrate is suggested to mimic the low - loss semi - insulating gaas substrate, but this is an uncommon option for current silicon substrate

    然而，由於低阻硅襯底的高頻損耗，在射頻微波應用中，要在低阻硅襯底上實現高q值的無源器件，尤其是電感，是相當困難的。
  4. The films prepared under 425 ? is composed with amorphous snoi and its sheet resistance is very high. with the substrate temperature ' s increasing, the degree of crystallization, film thickness increase and electrical resistivity, sheet resistance decrease obviously. when the substrate temperature is higher than 525 ?, the temperature ' s increasing is not of benefit to the films thickness and sheet resistance

    常壓熱分解cvd法制備的sno _ 2在較低基板溫度下制備出的薄膜基本上是非晶態的，方塊電阻很高；隨著基板溫度的升高，薄膜厚度增加，薄膜結晶程度提高，薄膜電阻率和方塊電阻均顯著降低；當基板溫度高於525以後，隨著基板溫度的升高，薄膜厚度基本不再明顯增加，薄膜結晶程度繼續提高，薄膜電阻率繼續降低，方塊電阻不再明顯降低。
  5. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  6. It possess many of the physical properties such as high atomic number ( z ), large enough band gap, high resistivity, relatively low leakage currents, and high intrinsic mobility - lifetime ( ut ) product, which are required for room - temperature nuclear radiation detectors. so it is widely used in nuclear medical imaging system, space engineering, and astrophysics, environmental monitoring, and so on. in addition, it is the best substrate for lattice matched epitaxial growth of hg1 - xcdxte ( mct ) thin films and solar cells

    用單晶czt製成的探測器可在室溫下工作，工作溫度范圍寬（ - 20 40 ） ，能量探測范圍寬（ 10kev 6mev ） ，對x射線、射線能量解析度高，在x射線、射線成像、天體物理研究、工業探測、安全檢測、核輻射探測、核廢料監控、 x射線熒光分析（ xrf ） 、 x射線斷層掃描和核醫學等方面有重要用途。
  7. Bn films doped with s are n type conductivity. undoped bn films exhibit a resistivity of 1. 8 1011 cm and those of doped are 2. 13 105 cm ， decreased by six order of magnitude. s fountain temperature and substrate temperature impact the resistivity evidently

    S源加熱溫度對氮化硼薄膜的電阻率有直接影響，表現在隨著s源加熱溫度的升高，氮化硼薄膜的電阻率下降的趨勢加快。
  8. Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage

    研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。
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