voltage-drift 中文意思是什麼
voltage-drift
解釋
電壓漂移-
During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state
在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。 -
The improved voltage model of rotor flux is proposed in the paper. it eliminates the influence to actual system function in the voltage model of rotor flux for the proper drift problem and cumulative error of pure integral calculus tache
提出了改進的電壓型轉子磁鏈估算模型，消除了電壓型轉子磁鏈估算模型中純積分環節所固有的漂移問題和積累誤差對實際系統性能的影響。 -
During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。 -
The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance, both of which are limited and cannot provide a globally accurate physical model
業界目前使用的模型只是在低壓mos模型基礎上作一些修改，或者通過用簡單多項式的形式建立dddmos漂移區電阻的宏模型以建模。 -
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。 -
The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer
模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。 -
The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage
結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。 -
In order to solve the problems of flux estimation using the voltage model, such as the initial value and the drift of pure integrator, a flux - observer - based method is applied
利用磁通觀測器，可避免用電壓模型推算轉子磁通時遇到的積分運算問題（初始值確定和誤差積累引起的積分漂移） 。 -
The accurate calculation of the input voltage and the compensation for the dc - offset error and the variation of the stator resistance are important factors in practical implementation of the integration since they can cause a drift in the stator flux linkage trajectory and furthermore deteriorate the quality of torque control
因此，輸入電壓的準確計算、直流漂移量的補償以及定子電阻變化的補償都是影響積分計算準確性的重要因素，這些誤差會導致定子磁鏈軌跡的偏移，進而降低系統轉矩控制的性能。 -
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。 -
And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail
並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。 -
That the common amplifier count rate is low, temperature voltage drift is very good, the machinery adjustment is rough and instability, in order to overcome these shortcomings ; we use digital potentiometer relay x9511 and precise operational amplifier op37, the electric circuit structure become simple
為了克服一般放大器計數率低，溫漂大，機械調節粗糙不夠穩定等缺點，使用了非易失性數字電位器x9511和精密運放op37 ，使電路結構大大簡化。 -
The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效應研究。研究了soisingle - resurfldmos的器件參數對擊穿電壓和導通電阻的影響。 -
At first, it describes structure of the full - length prototype, manufacturing craft and prepare to work, including sting, sealing, wire tension and leak current measurement, mounting of the preamp, gas system, high voltage system, reduction of noise and so on. the construction of full - length prototype provided valuable experience and important reference to the besiii drift chamber. then good function of the full - length prototype was performed using 55fe 5. 9kev x _ ray source. we can see that the uniformity of gas gain of the full - length prototype is well and it is effective for the compensation voltage to adjust the uniformity of gas gain of the boundary cells
為了初步測試模型的性能用55fe5 . 9kevx射線進行了氣體增益的均勻性檢測，隨之用55fe5 . 5kevx射線初步測試了模型性能，對部分高壓和補償電壓的設置進行了調整，驗證了對邊界場絲層加補償電壓能夠有效地調節邊緣層氣體增益的均勻性，實驗結果表明全長模型能正常工作並具有良好的性能。 -
High voltage drift drain mosfets ( dddmos ) are nowadays widely applied in circuits of power management, i / o interface, lcd drivers and etc. however, up to now a lack of a standard and accurate dddmos current model still brings much trouble in the circuit design
近年來，高壓雙擴散漏器件dddmos （ driftdrainmosfet ）以其優良的性能被廣泛地應用於電源管理、輸入輸出介面、 lcd驅動等電路中。然而，目前在業界缺少標準和準確的dddmos電流模型，給電路設計者帶來困難。 -
They indicate this amplifier ’ s antijamming ability is very high, the gain multistage changes steadily, its temperature voltage drift is low, and the pulse linearity is good and so on
提高了放大器抗干擾能力，使增益多級連續平穩變化，且具有溫漂低、脈沖線性好等特點。 -
Low temperature drift and high stability of output voltage is of key importance to an ideal voltage reference. they are also the focus of this paper
溫度和電壓穩定性是基準電壓源的重要指標，直接影響電路和系統的穩定性及多項性能指標，亦是本文設計中關註解決的重點。
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