斷塊上升作用 的英文怎麼說

中文拼音 [duànkuāishàngshēngzuòyòng]
斷塊上升作用 英文
block uplift
  • 斷 : Ⅰ動詞1 （分成段） break; snap 2 （斷絕;隔斷） break off; cut off; stop 3 （戒除） give up; abstai...
  • 塊 : 名詞（古時佩帶的玉器） penannular jade ring （worn as an ornament in ancient china）
  • 上 : 上名詞[語言學] （指上聲） falling-rising tone
  • 升 : Ⅰ動詞1 （由低往高移動） rise; hoist; go up; ascend 2 （等級提高） promote Ⅱ量詞1 （容量單位） lit...
  • 用 : Ⅰ動詞1 （使用） use; employ; apply 2 （多用於否定: 需要） need 3 （敬辭: 吃; 喝） eat; drink Ⅱ名...
  1. The meso - cenozoic evolution of bachu fault - uplift is closely related to its south and north subsiding foredeep. under the background of indian plate subducting under asia - europe plate, bachu forebulge was greatly affected by the development of southwest depression and awati depression. almost all of its structure reversed, and as a result of it, both of its south and north boundary migrated. according to its evolution history and its feature, the authors tentatively use both - side migration model to interpret the evolution of compound forebulge. since triassic, almost all the spheres above lithosphere synchronously became flexure. because transpressional stress field became increasingly strong, bachu forebulge continued uplifting and big faults formed. then, bachu uplift, as a whole, slipped upward along those big faults and showed migrating toward thrust zone in plane. in tectonic tranquility, the lithosphere bounded back and in consequence of it, bachu uplift slipped down and showed migration toward craton, at that moment negative inversion structures developed. while the forebulge migrated toward its south and north foredeep, it was very possible that locally extensional stress appeared in the forebulge

    在印度板塊向歐亞板塊俯沖的大背景下，巴楚前緣斷隆受西南坳陷和阿瓦提凹陷的影響，新生代時構造體制發生反轉，邊界向南北遷移。根據其發育過程特徵，作者用復合前緣隆起兩端遷移模式對復合前緣隆起獨特的構造發育史進行了解釋：即三疊紀以來巖石圈各圈層同步撓曲變形。隨著擠壓應力場的增大，巴楚隆起在撓曲基礎上不斷抬升，形成幾條大型斷裂帶。
  2. Special function will be implemented by downloading special software into the hardware platform, and the system can be constantly upgraded by continually upgrading the software. the author programs all the software which defines all the functions of if digital receiver taking fm receiving as example, which makes it the if digital unit of ultrashort fm transceiver

    通過向這個通用硬體平臺上加載相應的軟體完成特定的通信功能，通過對軟體的升級可以對這個系統不斷升級，作者設計了使這個硬體平臺完成調頻信號數字接收機功能的全部軟體，使這個硬體平臺可以作為軟體無線電超短波調頻電臺的中頻數字化模塊，承擔調頻信號的數字解調。
  3. On - line monitoring of hvcb is the precondition of predicting maintenance, is the key element of reliable run, and is the important supplement to the traditional off - line preventive maintenance in fact, the faults are made by hvcb, no matter in number or in times, is over 60 % of total faults so it has determinative importance for improving the reliability of power supply and this can greatly decrease the capital waste used by - dating overhaul in this paper, the inspecting way of hvcb mechanism characteristic is discussed the concept of sub - circuit protector is presented, the scheme that we offered has been combined with sub - circuit integrality monitoring theory, to ensure that it has the two functions as a whole according the shut - off times at rated short circuit given by hvcb manufacturer, the electricity longevity loss can be calculated in each operation, and the remained longevity can be forecast too an indirect way for calculating main touch ' s temperature by using breaker shell temperature, air circumference temperature and breaker ' s heat resistance is improved in this paper, and main touch resistance can be calculated if providing the load current msp430, a new single chip microcomputer made by ti company, is engaged to develop the hardware system of the on - line monitoring device, and special problem brought by the lower supply voltage range of this chip is considered fully

    高壓斷路器所造成的事故無論是在次數，還是在事故所造成的停電時間上都占據總量60以上。因此，及時了解斷路器的工作狀態對提高供電可靠性有決定性意義；並可以大大減少盲目定期檢修帶來的資金浪費。本文論述了斷路器機械特性參數監測方法；提出了二次迴路保護器的概念，並將跳、合閘線圈完整性監視和二次迴路保護結合起來，給出具有完整性監視功能的二次迴路保護器實現方案；根據斷路器生產廠家提供的斷路器額定短路電流分斷次數，計算每次分閘對應的觸頭電壽命損耗，預測觸頭電壽命；提出根據斷路器殼體溫度和斷路器周圍空氣溫度結合斷路器熱阻來計算斷路器主觸頭穩態溫升的方法，並根據此時的負荷電流間接計算主觸頭迴路的電阻；在硬體電路設計上，採用美國ti公司最新推出的一種功能強大的單片機msp430 ，並充分考慮該晶元的適用電壓范圍給設計帶來的特殊問題；在通信模塊的設計中，解決了不同工作電壓晶元之間的介面問題，並給出了直接聯接的接線方案。
  4. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
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