施主摻雜 的英文怎麼說
中文拼音 [shīzhǔchānzá]
施主摻雜
英文
donor doping-
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。In this dissertation, refining grains, depositing conductibility carbon film on the surface of the particles and doping mg ~ ( 2 + ) into the lattice of lifepo4 were adopted to improve the electro - chemical performance of the cathode material. the cathode material lifepo4 mainly has two flaws, the low conductibility and the slow li + ion diffusion, which have a bad influence on the performance of the cathode material
論文主要針對制約正極材料lifepo _ 4性能的兩大致命的缺點，即低的電子導電率和低的鋰離子擴散速率，採取材料顆粒的細化、顆粒表面沉積碳導電層以及mg ~ （ ~ （ 2 + ） ）離子摻雜等措施對其進行改性探索，以提高正極材料lifepo _ 4的電化學性能。But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed
而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。Begin with the comparation of two widely used methods producing the strontium titanate, the oxalate decomposition method shows its advantage hi the microstructure and future performance. the effect of caco3 is studied, and so is the effect of the donor dopant, such as nb2o5, y2o3 and la2o3. the dopant of tio2 is also considered, which involve ti / sr ratio, sintering temperature, oxygen partial pressure, donor dopant, grain growth and future electric performance
從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。The calculation of maximum potential barrier height of donor - doped barium titanate ceramics
施主摻雜鈦酸鋇陶瓷最大勢壘高度計算Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the
隨著膺ti合金rfsnte含量和測試溫度的上升， ag摻雜的作用逐漸降低，胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、載流子濃度趨于飽和以及ag作為間隙原一了提供額外施主。Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques. such an alloying process in semiconducting materials is termed doping
控制特定施主和受主原子的濃度，進而運用各種方法能動地填加，這種在半導體材料中加入合金成分的過程稱為摻雜。Research of this thesis include two parts mainly, first part include the preparation of srtio3 powder materials by sol - gel process and solid phase synthesis process. the second part, on the base of strontium titanate powder materials prepared, srtio3 - based capacitor - varistor double function ceramic were fabricated by the conventional ceramic process
第二部分是在制備的鈦酸鍶粉體材料的基礎上，通過摻雜施主、受主離子對鈦酸鍶材料進行半導化，制備電容-壓敏雙功能器件，並對兩種方法制備的元件性能分析比較。However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films
但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports
本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated
其中，採用cvd技術制備的以硫為施主的n型金剛石薄膜的遷移率與b單晶金剛石硫摻雜的遷移率達到了相同的量級。分享友人