易形奇術英文怎麼說

易形奇術 的英文翻譯

易形奇術 例句

1. 2. sritable for revolve aport and swing sport when under heavy weight and slow speed, aswell the ccoasion that not form fluid impetus lubrication because of frequently open and closed in the course of loading
   2適用於高載低速下的旋轉運動搖擺運動及經常在超負荷下啟閉頻繁而不 易 形 成流體動力潤滑的場合。
2. Conclusion the major cause of malposition of transpedicular screw internal fixation were mutation of and ambiguity of opography induced by spinal congenital malformation, cataplasia, fracture, lumbar olisthe or lateral curvature ; neglect of individuality and poor accuracy in implanting pedicle screw and inadequate understanding of biomechanics of spine about paracentesis
   結論脊柱先天畸 形 、退變、骨折、腰椎滑脫或脊柱側凸等病變導致椎弓根局部解剖變異或不 易 辨認， 術 者未注意個體化、穿刺精度不高以及對經椎弓根穿刺時脊柱生物力學變化理解不夠是置釘位置不佳的主要原因。
3. Graphic technology - prepress digital data exchange - colour line art data on magnetic tape
   圖 形 技 術 .預壓縮數字數據交換.磁帶的彩色藝 術 線條數據
4. Technology of tube hydroforming in lightweight of automobile
   汽車輕量化中的管材液壓成 形 技 術
5. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
   在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不 易 形 成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技 術 ，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。

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