晶界 的英文怎麼說

中文拼音 [jīngjiè]
晶界 英文
crystal boundary; grain boundary晶界區 crystal boundary area; 晶界組織 crystal boundary structure
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  1. Beryllium powders with the same particle size and various contents of beo were prepared by pre - sintering - acid washing processes initiatively and the influence of beo alone on o mys of beryllium was observed and some new results have been obtained - compared with the content of beo, the distribution of beo in beryllium has more critical influence on mys ; finely dispersed beo along the grain boundaries and in the matrix results in the dispersion strengthening of beryllium matrix and thereby the higher mys value ; on the contrary, the coarser beo particles clustering on the grain boundaries results in negative influence on o mys

    開創性地用預燒結? ?酸洗工藝制備了相同粒度、不同beo含量的鈹粉，從而開展了beo含量單獨對鈹材_ （ mys ）影響的研究，得出一些新的結果：與beo含量相比， beo在鈹中的分佈狀態對_ （ mys ）的影響更大。沿晶界、晶內彌散分佈的較細小beo對基體鈹有彌散強化作用，使_ （ mys ）即較高；如果beo較粗大地成簇狀聚集在晶界，反而對_ （ mys ）有不良的影響。
  2. Excessive imperfections even sub - grained boundaries may be introduced in cementite. this makes the accelerating dissolution and spheroidization of cementite easy. 5

    由於滲碳體的強烈塑性變形，在其內部導入了大量的晶體缺陷甚至亞晶界。
  3. This etchant can show different defects, such as dislocations, grain boundaries, twins, te - rich inclusions and precipitates etc., on different planes

    這種腐蝕劑能顯示不同晶面上的多種缺陷，如位錯、晶界、富te相等。
  4. The lamellae with edge - on and the flat - on orientation alternated to form the banded spherulites

    利用原子力顯微鏡原位觀察了環帶球晶界面的片晶生長。
  5. Grain boundary reoxidation of barium titanate ceramics doped with lanthanum

    摻鑭鈦酸鋇陶瓷晶界的再氧化
  6. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  7. Based on these experiments, it may be claimed that there is segregation of sn to grain boundaries in 0. 15 % c steel during cooling from a high solution treatment temperature. this segregation reduces grain boundary cohesion, which results in low hot ductility and intergranular fracture

    通過試驗和計算得出: sn在0 . 1swt . % c鋼中發生非平衡晶界偏聚的臨界時間為1245左右，臨界冷卻速率大約為8 / s ，與試驗結果基本一致。
  8. The results show that the solidification microstructure of high speed steel fe - 2 % c - 4 % v - 4 % mo - 5 % cr - x % w ( wt ) contains of martensite, retained austenite structure, and mc, m6c, m2c carbides, and mc / m2c complex carbides by xrd, sem and metallographs. most of the mc carbides locate in the cell and other carbides distribute along the boundary of the cell

    結果表明：經金相組織觀察、 x射線衍射和掃描電鏡分析， fe - 2 c - 4 v - 4 mo - 5 cr - x w合金系高速鋼凝固組織包含馬氏體基體、殘余奧氏體及各種類型的碳化物如mc型碳化物、 m _ 2c型碳化物、 m _ 6c型碳化物和mc m _ 2c類型復雜碳化物，大部分mc型碳化物分佈於晶粒內部，其它類型碳化物則沿晶界呈網狀分佈。
  9. The grain boundary fracture behavior in ni - base bicrystals

    鎳基雙晶體晶界斷裂特性研究
  10. Stress distribution near grain boundary in anisotropic bicrystals and tricrystals

    各向異性雙晶和三晶體晶界附近應力場分析
  11. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  12. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  13. So re oxides has two form existence, one is concentrate on the matrix equiaxial crystal grain boundary as a micron particles and the other is distributed in matrix crystal dispersively as the nanometer particles compared the electron emission performance of mo - la2o3, mo - ; la2o3 - y2o3 and mo - la2c > 3 - sc2o3 cathode, the mo - la2o3 - sc2c > 3 cathode show excellent electron emission character

    上述研究表明不論是在稀土?鉬陰極還是在稀土?鎢電極中，稀土氧化物的存在形式有兩種，一種是微米級的顆粒偏聚于晶界處，另外一種是彌散分佈於基體晶粒的納米小顆粒。
  14. To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density

    本文首次建立了晶界勢壘高度與伏安特性參數之間的關系，提出了陷阱效應在沖擊老化過程的作用模型，引入了「臨界陷阱電荷密度」的概念。
  15. The electric field strengthens the laminate boundary of 2090 alloy. the laminate strengthening mechanism translates into boundary strengthening and grain inner toughening with more ductility fracture and less intergranular fracture. the ductility property is enhanced with no change of intensity

    對鋁理合金sem實驗發現，電場固溶和時效強化了晶界，和晶內塑性的改善，斷裂特徵出現由分層沿晶斷裂向塑性斷裂轉變，斷麵塑性變形特徵增加。
  16. But when heavyly loaded, the former is far better than the latter. the wear resistance of za27 alloyed with mn is no obviously better than that of common za27 alloy. under the sliding friction conditions, the wear resistance at high temperature of za27 is improved by alloyed si and reaches the highest level when the content of si is 1 - 3wt. %

    裂紋主要始於脆性相si相和mn相，裂紋沿晶界擴展；在滑動摩擦條件下（常溫） ，含si的za27合金在載重較小時，耐磨性與普通za合金相比沒有明顯提高，但在載荷較大的情況下，其耐磨性遠高於普通za27合金材料；加mn的za27合金與常規za27合金相比，耐磨性沒有明顯提高；在滑動摩擦條件下， si的加入提高了za27合金的高溫摩擦性能。
  17. Stress distribution near cavity on grain boundary

    多晶體材料晶界孔洞應力場分析
  18. Recent studies of grain boundary internal friction

    晶界內耗的研究
  19. Applications of grain boundary design in polycrystalline metals

    晶界設計在多晶體金屬材料中的應用
  20. Ceramic crystal boundary and its application

    陶瓷晶界及其利用
分享友人
分享到 Line

分享到臉書