晶體計數管 的英文怎麼說

中文拼音 [jīngtǐjìshǔguǎn]
晶體計數管 英文
crystal counter
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 計 : Ⅰ動詞1 （計算） count; compute; calculate; number 2 （設想; 打算） plan; plot Ⅱ名詞1 （測量或計算...
  • 數 : 數副詞（屢次） frequently; repeatedly
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 計數 : count; tally; counting計數卡 numbered card
  1. Transistorized electronic digital computer

    晶體管電子數字計算機
  2. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  3. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  4. During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure

    設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
  5. And the fuzzy control technology has been studied that reduce the stator terminal voltage to achieve higher power factor through testing power factor and using certain rules. the asynchronous motor intelligence operating control system plan design has been completed. simulation design and simulation experiment of the system has been carried on, and the simulation result indicated this intelligence control system has achieved the anticipated effect

    在分析電機功率因數角的變化規律及功率因數角對晶閘管輸出電壓的影響的基礎上，提出了異步電動機在輕載或空載運行時通過檢測功率因數並經過一定規則降低定子端電壓來達到提高功率因數目的的模糊控制方法，完成了異步電動機節能運行控制系統的軟硬體設計，並進行了系統的模擬研究與實驗研究。
  6. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  7. In this article we propose a new kind of spin transistor with current amplification, and analyze its main parameters in detail

    摘要該文提出了一種電流放大型自旋晶體管設計思想，並對其電流放大系數作了一定的分析討論。
  8. For designing the microwave power amplifier formed by the chip of sige hbt more accurately, an novel method to extract chip s - parameter from s - parameter of packaged device with package is proposed

    為了更精確設計由sige異質結晶體管（ hbt ）管芯構成的微波功率放大器，本論文提出了一種新穎的從管殼封裝器件的s參數中提取出管芯s參數方法。
  9. The control circuit of digitalized soft - starter with the three - phase ac voltage regulating was designed. the digital phase shifting trigger based on the 80c196kc mcs and gal16v8 programmable device was developed. the control method for digital phase shifting trigger was given and its principle of operation and designing was discussed

    設計了三相晶閘管交流調壓數字軟起動器的硬體控制電路；研製了採用80c196kc單片機和gal16v8可編程器件構成的數字移相觸發系統；給出了數字移相觸發控制方法，分析和討論了該方法的工作和設計原理；採用了一種參數自整定的混合型模糊pid控制方法。
  10. Ningbo ekey ruineng electric technology co., ltd. is ningbo ekey holding groups subsidiary company. the head offices main business is embedded software industry and hammer at development the software exploiture and design, network engineering, chip development, ipv6 digital switching equipment, mobile communications, internet phone, intelligent home electric equipment, automobile anti - theft devices, unlimited remote control and power adapter, etc high - tech industri

    寧波易科瑞能電子科技有限公司是寧波易科投資控股有限公司下屬子公司，集團公司以嵌入式軟體產業為主營業務，以軟體開發設計，網路工程，晶元研發， ipv6數字交換設備，移動通訊，網路電話，智能家電，汽車防盜器，無限遙控，電源適配器等高科技產業為重點發展方向，並從事房地產開發，酒店投資管理，國際國內貿易等業務，在線投資總規模超過11億人民幣
  11. The proposed modulator uses 0. 35um standard cmos process, the nmos and pmos threshold voltage is 0. 54 volt and - 0. 48 volt, respectively, and the power supply is 1. 5 volt. the nyquist converter rate is 50 khz, oversampling ratio is 80. the proposed modulator can obtain 98db dynamic range, 16 bits converter resolution, and fits for high - fidelity, digital - audio application

    本設計採用0 . 35微米標準cmos工藝，其中nmos和pmos晶體管的閾值電壓分別為0 . 54伏和- 0 . 48伏，電源電壓為1 . 5伏，奈奎斯特轉換率為50khz ，過采樣率為80 ，該調制器可實現動態范圍98db ， 16位的轉換精度，適合高保真數字音頻應用。
  12. The transistor count is 3. 8 million ; the package is surface mount 240 - pin quad flat pack ( qfp240 ) ; and the die size is 98mm2 ; the most advanced research progress on microprocessor architecture is extensively studied to get technical preparations for microprocessor design

    該處理器目前正在進行後端設計，即將採用0 . 25 mcmos工藝流片，整個處理器的晶體管數目為380萬，封裝形式是qfp240 ， die面積為98mm ~ 2 。
  13. This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit

    本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。
  14. A novel hard ip core of analog - to - digital converter is achieved, with the transistor level circuit and physical layout designed in detail

    針對這一需求，本文完成了一種模數轉換器硬ip核的晶體管級電路設計以及物理版圖布局設計。
  15. Computers, 1996, 45 : 319 - 327. 16 wang c c. an algorithm to design finite field multipliers using a self - dual normal basis. ieee trans

    以晶體管數來評估電路的面積，與傳統的雙重基底乘法相比較，設計的乘法器可以省65 %電路設計面積。
  16. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  17. The developmental requirement of power systems and the continuous appearance of new technology are the source of the evolution of the theory and technology in relay protection of power systems. with the development of computer technology, relay protection has entered into digital age

    電力生產發展的需要和新技術的陸續出現是電力系統繼電保護原理和技術發展的源泉，計算機技術的發展，使得繼電保護已從電磁型、整流型、晶體管型、集成電路型進入了數字型的時代。
  18. In order to prove the simulation system ' s correctness, the 1 - dimension steady analysis for transistors is completed with matlab5. 3, a numerical tool

    在此基礎上，使用matlab5 . 3數值計算工具完成了晶體管的一維穩態分析，以驗證模擬系統結果的正確性。
  19. The client program, the middle ware and the server program design are partially realized at the base of computer technology in the need of semiconductor device simulation and the partitioning of functional modules for the simulation system, then the discussion on the input parameters and the analysis for the output result are implemented

    探索了器件并行模擬系統所需的計算機技術和模擬系統的功能模塊劃分，並具體部分實現了客戶端程序設計、中間件設計和服務器端程序設計，運用它完成對晶體管的摻雜濃度分佈、電子和空穴濃度模擬，並對輸入參數進行了討論和計算結果輸出進行了分析。
  20. Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied. the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too. the accumulation - mode varactor, which has a higher quality factor value than the inversion - mode mos varactor, is studied in detail

    研究電感和變容管這兩種射頻集成無源器件的寄生效應和射頻mos晶體管的熱噪聲模型，提出集成電感的設計原則和優化方法，詳細研究了一種新型的積累型mos可變電容，這種積累型mos變容管比一般的反型mos變容管有更高的品質因數。
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