氮化了的 的英文怎麼說

中文拼音 [dànhuàlēde]
氮化了的 英文
nitrogenated
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 了 : 了助詞1. （用在動詞或形容詞后, 表示動作或變化已經完成） 2. （用在句子的末尾或句中停頓處, 表示變化, 表示出現新的情況, 表示催促或勸止）
  • 的 : 4次方是 The fourth power of 2 is direction
  1. The curing system of gap ( glycidyl azide polymer ) has been studied

    本文系統研究了gap （聚縮水甘油疊氮化物）的固化體系。
  2. Based on the analyses on mechanical properties, microstructure and fracture of - the microalloyed steels socrv with various heat treatment technique, it can be affirmed that various fractures arttribute to various mechanism, we can draw conclusion that the strength and toughness of microalloyed steels 50crv will be increase simultaneously by optimal heat treatment technique. to illustrate the mechanism of the strength and toughness of microalloyed steels socrv, we designed the comparative experiment and observed the microstructure of the sample which occurred at different quench and tempering temperature and different tempering time. the last experiment results were determined by the four factors : fined microalloyed elements grains, the decompound of martensite, martensite transformation of remnant austenite and the second phase precipitation

    為解釋微合金化50crv鋼強韌化機理，本文通過對不同淬火溫度，回火溫度，回火時間下的力學性能指標的對比及顯微分析，認為微合金元素的細化晶粒，馬氏體的回火分解，殘余奧氏體的轉變，第二相的沉澱析出共同決定了微合金鋼的強韌化情況，特別是由於微合金元素的存在，其細化晶粒及其碳氮化物的沉澱析出，導致鋼的良好的強韌性，並且如果工藝滿足第二相的沉澱析出強化大於回火馬氏體分解引起的軟化效應，會在硬度曲線中產生明顯的二次硬化現象。
  3. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  4. Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates, respectively

    我們通過改變氮化程序，分別在石英襯底上合成了平直的gan納米線和魚骨形gan納米線。
  5. Electroless plating method is applied to metallize the aln sbstrate

    應用化學鍍鎳的方法實現了氮化鋁的金屬化。
  6. 1. two kinds of azo pigments with excellent photosensitivity, named as flurenone bisazo ( f - azo ) and oxazole bisazo ( o - azo ), are synthesized. the preparation of organic photoconductive blended materials and their photoconductivity in single - layered photoreceptors made from f - azo / titanium oxide phthalocyanine ( tiopc ) composite and o - azo / tiopc, respectively, are investigated

    合成了芴酮基偶氮（ f - azo ）與?唑基偶氮（ o - azo ）兩種光敏性優良的偶氮化合物，並以此制備了芴酮基偶氮酞菁氧鈦和?唑基偶氮酞菁氧鈦復合光電導材料體系及其單層光電導體。
  7. The first liquid oxygen and liquid nitrogen equipments of xichang and jiuquan satellite lauching base run normally until now, which has made important contribution for our coutry ' s aviation and spaceligh enterprise, thus attained national defense sicience and industry committ ' s appreciation

    提供大連日酸氣體公司的氮液化設備，開創了日酸公司首用國產成套設備的先河；哈爾濱黎明氣體公司和成都僑源氣體公司則是我公司大型液氧液氮設備的重點用戶，由於過硬的技術和穩定的質量，短短二、三年時間內，這些用戶相繼增購了多套同類產品。
  8. Ti ： fabrication of boron nitride ceramic fibers from alkylamino borazine polymer precursors by fiber drawing and heat - treatment. inventors ： miele, philippe ; toury, berangere ; bernard, samuel, etc

    摘要：本文研究了含有高密度連續碳纖維氮化硼纖維復合材料的制備方法。探討了碳纖維與氮化硼纖維不同排布對復合材料性能的影響。
  9. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  10. Charcoal and fertilizer reduce the typical nitrous oxide ( ghg ) emissions from agricultural fertilizer use

    木炭和肥料減少了農業肥料使用中典型的氮化物的釋放量。
  11. With reference to an american patent, cl - 18 was synthesized from 3, 5 - dinitrobenzoic acid through schmidt reaction, nitration, azidation and thermal decomposition

    參照美國的專利文獻，以3 ， 5 -二硝基苯甲酸為原料，經schmidt反應，硝化、疊氮化、脫氮四步反應合成出了cl - 18 。
  12. It enlarges yield capacity during the vegetative and early reproductive stages, and accelerates production of assimilates at the grain filling stage

    氮提高了營養生長期和生殖生長前期的產量能力，加速灌漿期同化物的生成。
  13. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  14. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  15. On the other hand, explosive boron nitride ( e - bn ), another high - pressure phase of bn, was obtained in the resultant films. we also studied the thermodynamic parameters of the growth of e - bn films

    另外，在我們所制備的薄膜中還得到了氮化硼的另一高壓相-爆炸結構氮化硼（ e - bn ） ，並初步研究了其生長的熱力學參數。
  16. In this paper we studied the influence of process parameters of depositing cbn films, the n - rype doping of bn films and the properties of p - si / n - bn heterojunctions and gained the results as follows

    本文主要研究工藝參數對制備立方氮化硼的影響，氮化硼的n型摻雜和p - si n - bn異質結特性等內容，得到了如下主要結果。
  17. The influence of process parameters for depositing cbn was studied all round and showed that cbn forms in a very narrow window

    系統地研究了工藝參數對立方氮化硼的影響，實驗表明立方氮化硼只在很窄的窗口產生。
  18. Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research

    本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。
  19. They are confident of this thanks to the development of a compound, gallium nitride, that can be used instead of the more conventional sapphire, thereby halving the cost of the leds

    小組成員對此極有信心，因為他們開發了一種氮化鎵的化合物，取代更多的傳統青玉，從而使發光二極體成本縮減一半。
  20. The sample used for the kinetics research was cylinder in size of 37. 2 26mm molded at a pressure of 6mpa with a composition of 1 : 3. 0 of titania to active carbon

    首先，對鈦白粉、活性碳用碳熱還原反應合成氮化鈦進行了熱力學分析，證明了碳熱還原反應合成氮化鈦的可行性。
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