氮氣壓力表 的英文怎麼說
中文拼音 [dànqìyālìbiǎo]
氮氣壓力表
英文
nitrogen pressure gauge- 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
- 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
- 壓 : 壓構詞成分。
- 力 : Ⅰ名1 （力量; 能力） power; strength; ability; capacity 2 [物理學] （改變物體運動狀態的作用） forc...
- 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
- 氮氣 : nitrogen; nitrogen gas氮氣燈 nitrogen lamp; 氮氣瓶 nitrogen cylinder; 氮氣容器 nitrogen gas conta...
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Through analyzing the effect of temperature and nitrogen on crude oil viscosity the influences of different nitrogen injection volume and injection modes on steam displacement are contrasted, the mechanism of nitrogen - assisted steam stimulation is clarified, which includes : heat carrying capacity is raised, the saturation of remaining oil is reduced after nitrogen - assisted injection is made ; crude oil flow is enhanced because of nitrogen compression and dispersion and the change of oil flow shape ; water back - production rate is improved by expanding the steam sweep volume and compensating in - situ energy ; steam distillation effect is enhanced
通過分析溫度、氮氣對原油粘度的影響，對比不同注氮量、不同注入方式等對蒸汽驅油效果的影響，弄清了氮氣輔助蒸汽增產的機理主要表現在：氮氣輔助后增加攜熱能力，降低殘余油飽和度，氮氣的壓縮膨脹作用分散和改變了原油流動形態，增強了原油流動性；擴大蒸汽的波及體積，補充地層能量，提高回採水率，強化蒸汽蒸餾效應。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
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