生長模式 的英文怎麼說

中文拼音 [shēngzhǎngmóshì]
生長模式 英文
growth pattern
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 式 : 名詞1 （樣式） type; style 2 （格式） pattern; form 3 （儀式; 典禮） ceremony; ritual 4 （自然科...
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 模式 : model; mode; pattern; type; schema
  1. The charter i introduced the schematics of the experimental setup, the model of pulsed laser ablating solid target ( s - n model ) and the subplantation model for film growing proposed by y. lifshitz

    第一章簡要介紹了實驗裝置、激光燒蝕固體靶的s - n模型和y . lifshitz提出的次表面生長模式。
  2. The pattern of woody increments can be readily observed on stumps and on the ends of cut sections of tree stems.

    在伐根上和樹干截面上，可以很容易地觀察出木材生長模式。
  3. With observing the topography of different time period by afm, the formation mechanism of five stages of ots molecular film was concluded. 4. tribological characteristics of ots self - assembled molecular film were studied by lfm. the effects of sliding velocity and load on frictional force were analyzed

    在研究過程中，通過原子力顯微鏡（ afm ）觀察不同成膜時間及不同溶劑組成條件下的ots自組裝分子膜的形貌，由此來判斷反應進程，總結出ots自組裝分子膜生長模式的五個階段。
  4. The structurally perfect and high - quality ba0. 5sr0. 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0. 1sr0. 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates

    詳盡地分析這些薄膜的衍射圖樣可知，薄膜都是以外延特性生長的而且晶體質量良好，但薄膜生長模式及表面平整度受沉積條件影響較大。
  5. 4. in the vegetation growth simulating model, a new vegetation phenology and temperature criteria added, which control the growth time of deciduos needleleaf forest in north china, make the simulated results more fit the fact

    4 ）在植被生長模式的模擬中，在物候方面增加了限制，即用界限溫度控制北方冬季落葉樹木的生長季，使結果更加接近實際情況。
  6. It was found that an uniform and compact tio2 nanoparticulate film can be deposited on pet substrates in a short time, and it ' s thickness increases with the treating time. when the thickness comes to a critical value, there grows a greater size cluster on the nano - sized film. this is an interesting film growing pattern, which has never been reported

    與以往報道的生長模式不同，發現在很短的時間內即可在基底上濺射生成緻密均勻的納米膜層，其膜厚隨著時間的延長而增加，且當達到一定厚度時，又在原有納米膜層上生長出更大尺寸的團蔟結構。
  7. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  8. And that is how, on one and the same crystal, although it has grown quite naturally, completely different colours can occur, mostly in elongated columns one above the other, as if nature had piled coloured rings one on top of the other

    因此，在同一個自然生長的晶體，是極有可能會出現許多不同的顏色。通常它的生長模式是順著縱向一層一層的加上不同的顏色，就好比製作多層彩色果凍般，在每一層顏色上加上另一層不同的顏色。
  9. With their immovable grwoth form and outward appearance like a flower or a tree, corals were mistaken for plants growing at the sea bottom in the past

    ?們固定不動的生長模式，以及像花或像樹的外形，很容易被誤認為生長在海底的植物。
  10. For system with growth modes transition, different growth stages can be analyzed by different theory respectively, combined with rheed

    對于具有生長模式轉變的體系，可以由上述理論結合rheed分析不同階段的應變過程和與之對應的生長模式。
  11. Through simulation, the morphology of the films grown under different rates and substrate temperature was obtained, and the growth mode under different condition was analyzed

    通過模擬，獲得了不同沉積速率及不同襯底溫度的薄膜形貌，並且分析了不同條件下薄膜的生長模式。
  12. At the same time, the researchers hoped that unifies the root and stem ' s growth pattern, forms the entire hypothesized plant the pattern and builds the hypothesized plant laboratory

    同時，研究人員希望將根與莖的生長模式結合起來，以形成整個虛擬植物的模式並建立虛擬植物實驗室。
  13. Two different growth methods are used to prepare ultra - thin hflayers on si ( 001 ) substrate for the purpose of studying the initial stage of the hafniuin / si ( 001 ) interface formation

    5單層hf原子于a （ 001 ）襯底，並繼之以最高至650的退火。上述測量結果表明hf在ao ）的室溫淀積模式是所謂的層層生長模式。
  14. For the first time, the oriented percolation model is applied to analyzed the critical particle concentration of 0. 37 and which is characterized an electrorheological fluid and independent to the external electric field

    同時得出，分形維數（ d _ f ）與外加電場性質無關，但隨微粒的體積百分數增加而趨近於dla生長模式的特徵值1 . 8 。
  15. These are useful references for orthodontists not only to predict the vertical facial growth in children or adolescents with open bite but also to identify the cause of open bite in adults

    籍由了解這些開咬病患隨成長產生的顧顏構造之型態變化，不僅有助於矯正醫師預測成長中開咬孩童的顱顏生長模式，也可以確定成人開咬現象的成因。
  16. The synthesized gan nano structures by the two steps growth pattern are hexagonal single crystal gan. the photoluminescence ( pl ) properties of the formed one - dimensional gan nano structures gained at room temperature revealed nicer results

    用兩步生長模式合成的一維gan納米結構為高質量的六方單晶gan ，在室溫下測得了良好的光致發光ol ）特性。
  17. Rheed is a powerful tool to monitor and analyze thin films growth dynamically. the growth modes ( layer - by - layer mode, stranski - krastanov mode, 3d mode, texture, and growth modes transition ) and strain relaxation behaviors ( by measuring and calculating the spacing between chosen diffraction dots or streaks ) can be tracked by rheed from its diffraction patterns and intensity oscillations

    從生長模式上看，可以分析如層狀生長，層島結合生長，島狀生長，織構以及這幾種生長模式的轉變過程;從監測應變釋放上看，可以通過精細分析衍射點的間距得到具體的應變釋放過程。
  18. Recently, the isolation and characterization of genes and mutants with altered shoot branching patterns has been used to study this phenomenon, through the molecular and genetic analysis has been given invaluable information of defective in the branching pattern

    近年來，分離及研究可以改變側枝生長模式的基因及突變體，經常用來研究這種生命現象，這對于解釋頂端優勢現象是必不可少的。
  19. In this paper, we have successfully synthesized high purity one - dimensional gan nano structures and high quality gan crystal films with novel and simple two steps growth pattern. the composition, the structure and the photoluminescence properties of the fabricated products were analyzed in detail. the growth mechanism of two steps growth pattern were primarily discussed

    本文採用簡單、新穎的兩步生長模式，在不同襯底上合成了高純的一維gan納米結構和高質量的gan晶體膜，詳細地分析了合成產物的組分、結構和光致發光特性，初步提出並探討了兩步生長模式合成一維gan納米結構的摘要生長機制，總結了影響一維gan納米結構和gan晶體膜生長的主要規律和因素。
  20. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
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