質子空穴態 的英文怎麼說

中文拼音 [zhízikōngxuétài]
質子空穴態 英文
proton hole state
  • : Ⅰ名詞1 (性質; 本質) nature; character; essence 2 (質量) quality 3 (物質) matter; substance;...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
  • : 名詞1 (巖洞; 窟窿) cave; cavern; grotto 2 (動物的窩) den; hole 3 (墓穴) grave4 [中醫] (穴...
  • : 名詞1. (形狀; 狀態) form; condition; appearance 2. [物理學] (物質結構的狀態或階段) state 3. [語言學] (一種語法范疇) voice
  • 質子 : [物理學] proton; uron; hydrion; merron質子泵 proton pump; 質子層 proton sphere; 質子轟擊 proton b...
  • 空穴態 : hole state
  1. The relativistic random phase approximation ( rrpa ) is a relativistic extension of the random phase approximation for studying microscopically nuclear dynamical excitations and giant resonances. the consistency of rrpa calculations requires two aspects : first, it demands that the relativistic mean - field wave " function of nucleus and the particle - hole residual interactions in the rrpa are calculated in a same effective lagrangian. second, the consistent treatment of rrpa within rmf approximation requires the configurations including not only the pairs formed from the occupied fermi states and unoccupied stat es but also the pairs formed from the dirac states and occupied fermi states

    自洽的相對論無規位相近似理論的自洽性要求有兩方面的內容:第一,描述原核的激發和基時必須從同一個有效的拉矢量出發;第二,相對論無規位相近似計算,不但要考慮正能的粒-的貢獻,而且還要考慮從fermi海核到dirac海負能核形成的對激發的貢獻。
  2. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標,提出了提高及b幾種方案,研究了材料性,器件結構,它們的穩及瞬特性及發光機理,特別關注了以兼具電傳輸能力的分及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流注入、遷移、復合及湮滅等。
  3. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型,對溝道雜濃度不同的深亞微米槽柵和平面pmosfet中施主型界面引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面密度在槽柵器件中引起的器件特性的漂移遠大於平面器件,且電施主界面密度對器件特性的影響遠大於界面.特別是溝道雜濃度不同,界面引起的器件特性的退化不同.溝道摻雜濃度提高,同樣的界面密度造成的漏極特性漂移增大
  4. Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively

    其次,由於一直以來藍光oled器件的研究處于相對落後的狀,其發光亮度、效率、穩定性和色純度都無法綠光器件相比,所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 )研究了雙異型藍光oled器件,由於本研究引入了阻擋層,使得載流的復合和激的擴散被限定在發光層內,器件的發光效率達到了1 . 90lm / w ,最大亮度達到了10000cd / m2 ,比傳統結構器件的效率和亮度提高了約一個數量級; 2 )制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件,研究發現,當改變各有機層厚度時,器件的電致發光光譜發生了從綠光到藍光的移動。
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