離子氮化爐 的英文怎麼說

中文拼音 [zidànhuà]
離子氮化爐 英文
ion nitriding furnace
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 名詞[化學] nitrogen (7號元素, 符號n)
  • 離子 : [物理學] ion
  1. Pulse glow ion nitrogen furnace

    脈沖式輝光離子氮化爐
  2. Dc glow ion nitrogen furnace

    直流式輝光離子氮化爐
  3. Heat treatment equipment ion nitrogen oven

    熱處理設備:
  4. Reformation of ld3 - 200 1000 type glow ion nitriding furnace

    1000型輝光離子氮化爐的改造
  5. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上,採用電迴旋共振等體增強mocvd ( ecr - pamocvd )方法,在藍寶石襯底上通過s - k模式自組裝生長gan aln量點結構的生長工藝、結果及討論。而重點分析了自組裝生長量點之前的aln外延層生長工藝,包括襯底清洗、、緩沖層的生長和gan 、 aln外延層的生長;通過高能電衍射、 x射線衍射和原力顯微鏡測試,並且對這些測試結果進行了詳細的比較研究,得出了較優的工藝條件,生長出了晶質較好、表面較平整的aln外延層;進而採用s - k模式自組裝生長了gan aln量點結構。由於實驗裝置加熱溫度的限制,我們沒有能夠生長出原級平滑的aln外延層表面,因而沒能夠生長出密度比較大和直徑比較小的量點。
  6. Ion nitriding furnace 1200 1600

    離子氮化爐
  7. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等體9200是桶式脫模體,擁有可控制的高溫系統可去除光阻材料、物蝕刻和半導體與微型機電系統等方面的清洗功能
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