electron avalanche 中文意思是什麼
electron avalanche
解釋
電子雪崩-
A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente
電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。 -
The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )
影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。 -
According to secondary electron emission avalanche ( seea ) theory, the effects of insulating materials, shapes, electrode structures of vacuum insulator on surface flashover and its mechanism, design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material, shape and electrode structure are reviewed
摘要根據二次電子發射崩（ seea ）理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。
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