gaas fet 中文意思是什麼
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Through the design the dc feed network, input matching network for the ne900175 gaas fet and analysis the stabilization, power gain, bandwidth of the power amplifier we get the power amplifier is stability, the power gain is 11. 967db and the bandwidth is 300mhz. microstrip antenna has a narrow bandwidth, in this design antenna ' s bandwidth is 100mhz. antenna is the not only the load of the power amplifier, but also as the filter connecting to the output of the power amplifier
E類功放的pae相對a類、 b類、 ab類的功率放大器類型而言比較高，在50 ? 70 。分析了e類功放的工作過程后，以ne900175的gaas場效應管作為e類功放電路的開關，進行了外圍電路的設計，包括直流偏置電路、輸入匹配網路的設計，功放的穩定性、帶寬、增益的分析。該功放增益最大達到11 . 4db ，帶寬為320mhz 。 -
Guidelines for gaas mmic and fet life testing
Gaas mmic和fet壽命試驗的指南 -
There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication
目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。 -
Semiconductor discrete devices. detail specification for type cs0558 gaas microwave dual gate fet
半導體分立器件. cs0558型砷化鎵微波雙柵場效應晶體管詳細規范
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