low-pressure chemical vapor deposition 中文意思是什麼

low-pressure chemical vapor deposition 解釋
低壓化學汽相沉積
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • pressure : n 1 壓；按；擠；榨。2 【物理學】壓力，壓強；大氣壓力；電壓。3 精神壓力，政治[經濟、輿論等]壓力。4...
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
  2. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  3. Generic specification of low pressure chemical vapor deposition system

    低壓化學氣相淀積設備通用技術條件
  4. Microwave plasma chemical vapor deposition ( mpcvd ), a kind of chemical vapor deposition method with low temperature ， low intensity of pressure and clearance ， is commonly used for the growth of diamond thin films

    微波等離子體增強化學氣相沉積法（ mpcvd法）是眾多低氣壓下激活cvd工藝方法的一種，也是目前在國內外比較流行的制備金剛石薄膜的工藝方法之一。
  5. 3. the gap defects in multilayer cvd sic coatings could be effectively controlled by means of slow deposition in low - pressure chemical vapor deposition ( lpcvd ). 2d c / sic composites with a multi - layer cvd sic coating prepared by slow lpcvd showed weight gain at 1300 @ in air condition

    （ 3 ）採用慢速減壓化學氣相沉積工藝實現了對多層cvdsic塗層面缺陷的有效控制，實現了單一cvdsic塗層保護2dc sic在高溫下（ 1300 ）的氧化增重。
  6. In order to study these two questions, high quality nanocrystalline zno thin films were prepared by thermal oxidation of zns thin films, which were deposited by using low pressure metalorganic chemical vapor deposition technique

    針對這兩方面問題我們做了如下研究：利用低壓金屬有機化學氣相沉積（ lp - mocvd ）工藝，首先在二氧化硅襯底上生長納米zns薄膜，然後，在不同溫度下進行熱氧化處理。
  7. ( 2 ) several samples of different structure parameters are grown by low - pressure metal - organic chemical vapor deposition ( lp - mocvd ). it is found that pl peak intensity, full width at half maximum ( fwhm ) and light output intensity are greatly dependent on number of wells. ratio of well / barrier width nearly has no effect on pl peak intensity and fwhm, but has little relation to light output intensity

    通過分析pls ，可以及時獲取材料生長和結構設計的數據，對質量控制有重要的指導意義； （ 2 ）對不同結構的gainp algainp多量子阱樣品進行了光致發光及出光強度的測量，發現mqw的周期數目n對pl峰強度、半峰寬和出光強度的影響最大；阱壘寬厚度比a對pl峰強度和半峰寬的影響較小，但對發光強度的影響較大。
  8. Secondly, a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )

    其次，設計包含低壓淀積氮化硅和化學機械拋光（ cmp ）等關鍵步驟的新的soi介質隔離工藝流程。
分享友人
分享到 Line

分享到臉書