wafer process 中文意思是什麼
wafer process
解釋
晶片加工-
Research on error automatic revised method of lsi wafer honing process
集成電路基板研磨表面誤差自動修正技術 -
Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。 -
Waxes for electron wafer binding : waxes for electron wafer binding, mainly used in precision process of micro electron wafer ( u piece, s piece or smd piece ), excellent strong adhesive ability, no scathe to element, cleanup easily after process
電子晶片粘接蠟系列：主要用於微電子矽片或石英晶片（ u片、 s片或smd片）的精密加工，具有極強的附著力，對元件無任何損傷，使用后易去除。 -
Our extensive wafer manufacturing expertise qualifies us to provide wafer sub - contract services for a wide variety of crystal materials. ingot slicing and grinding, wafer lapping and polishing are process we can provide on a sub - contract basis
我們淵博的晶圓製造專業為晶體材料同業提供多種晶圓代工服務。項目包括晶棒切割與成型、晶片研磨與拋光。 -
The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated
對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。 -
Etch - a process of chemical reactions or physical removal to rid the wafer of excess materials
蝕刻-通過化學反應或物理方法去除晶圓片的多餘物質。 -
In one variant of this process the bumps are etched onto the tape rather than deposited on the wafer.
這種工藝有一種方式是，凸出物被蝕刻在帶上，而不是沉澱在矽片上。 -
Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.
光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。 -
At the same time, in order to maintain good fabrication quality, shorten the process time and meet the required due date, it is absolutely necessary to have good rework strategies for wafer rework so as to make up the wafer defects in the photolithography area
為了顧及生產中在制品水平量、產品生?流程時間、產品交期等目標，必須要有良好的再加工策略處理晶圓的再加工。 -
With the existing condition, the bar waveguide on the lithium niobate wafer with liquid phase proton - exchanged method has been fabricated and the benzoic acid is used as the proton source. a series of research on the domain inversion in lithium niobate crystal with proton - exchanged method have been done. and then the operation and the process of domain inversion in lithium niobate crystal with proton - exchanged method has been used
實驗方面，利用實驗室現有條件，在鈮酸鋰晶片上以苯甲酸為質子源，用液相質子交換法製作了條形波導;對用質子交換法實現鈮酸鋰晶體疇反轉進行了一系列實驗研究，在此基礎上提出了質子交換法實現鈮酸鋰晶體疇反轉的工藝過程，實現了疇反轉並腐蝕得到了v型槽;設計製作了帶尾纖的電光相位調制器，最後進行封裝。 -
By using a wafer - rotating grinding machine, the influence of the main process factors including grit size of diamond grinding wheel, rotating speed of the wafer chuck table, rotating speed and the down feed rate of the cup grinding wheel on the material removal rate, spindle motor current and wafer surface roughness in grinding large size wafer are experimentally investigated
摘要利用基於自旋轉磨削原理的矽片超精密磨床，通過試驗研究了砂輪粒度、砂輪轉速、工件轉速及砂輪進給速度等主要因素對材料去除率、砂輪主軸電機電流以及磨削后矽片表面粗糙度的影響關系。 -
There exist large stress, intensive scratch, damage and pollution of ion in wafer process, so it is necessary to improve mechanism of slicing and lapping by changing single mechanical function to equilibrium chemical and mechanical function for small damage and low stress. reducing damage and stress and enhancing quality and efficiency of product result in a base of followed process so as to improve wafer process and enhance finished product ratio of whole wafer process
目前加工過程中存在應力過大，造成表面劃傷嚴重，容易產生破損，離子沾污的問題，因而必須改善切削、研磨機理，把單一的機械作用變為均勻穩定的化學機械作用，以達到淺損傷、低應力的目的，有效的減少破損層和應力的累積，提高產品質量和加工的效率。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
This sensor is made from batio3 and cuo powder in nanometer grade. the process of manufacture is described as mixing batio3 and cuo powder adequately, then pressing the mixture into wafer with thickness 0. 6mm and radius 8mm, and finally sintering the wafer at 500 ? for 5 hours
這種傳感器的原料由納米級batio _ 3和cuo粉末組成，製作過程是將兩種粉末充分混合，然後壓製成半徑8mm ，厚0 . 6mm的圓片， 500下燒結5小時后，兩面設置導電銀電極，引出pt線。 -
The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed
隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。 -
With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。 -
Slicing and lapping are two basic procedures in wafer substrate process and are introduced firstly in this thesis
切片和研磨工序是硅器件襯底片制備中的兩道基本工序。本文首先介紹了這兩道工序。 -
Understand several methods of making slides, such as wafer method, tissue segregation process, paraffin section, dying and enveloping, and learn several record methods, such as text description, biological plot, photos
切片、離析製片、石蠟製片、染色封片等。掌握各種記錄法，如文字描述、生物繪圖、攝像錄入等。 -
We effectively solve the stress of wafer process and prove the function of the new slicing slurry and lapping slurry in wafer process. research fruit is applied to manufacture
在實驗部分中我們有效地解決了矽片加工的應力問題，驗證了新型切削液和研磨液在矽片加工過程中的明顯作用，並使研究成果投入生產轉化為產品。 -
Wafer process control system
晶元處理控制系統
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