脈石化合物 的英文怎麼說

中文拼音 [màidànhuàgěwù]
脈石化合物 英文
gangue compound
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 石 : 石量詞（容量單位, 十斗為一石） dan, a unit of dry measure for grain （= l00 sheng）
  • 合 : 合量詞（容量單位） ge, a unit of dry measure for grain （=1 decilitre）
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  1. The metallic mineral has very few content ( 1 % - 2 % ), the mineral of ore is mainly of pyrite, chalcopyrite, limonite, aurum and electrum etc. the gangue mineral is composed of chalcedony, micro grained quartz, calsite, sericite, adularia, aragonite, chlorite, laumontite, pyrophyuite, kaolinite and so on, which show the typical mineral assemblage of epithermal

    礦石為典型少硫化物型，金屬礦物含量極少（ 1 - 2 ） ，主要有黃鐵礦、黃銅礦、褐鐵礦和自然金、銀金礦等。主要脈石礦物有玉髓、微粒石英以及方解石、絹雲母、冰長石、文石、綠泥石、濁沸石、葉臘石、高嶺石等，屬典型低溫礦物組合。
  2. It is further indicated by the fusion of various geo - factors that the major targets include gold - bearing limonitic cataclastic rock in ningwei domain, auriferous quartz in nanhua mountain and xihua mountain domain, where the 50 - 85 strike mylonite and sulfur - bearing quartz - calcite veins of cataclastic rock is the prior ore - search targets

    同時，通過多源地學因素的融合還顯示，寧衛地區找金的主攻對象以含金褐鐵礦化碎裂巖為主，南華山、西華山地區以脈型金礦為主，且重點應在50 - 85度方向糜棱巖、碎裂巖帶中尋找含硫化物的石英-方解石脈。
  3. The gangue minerals are mostly carbonating minerals, fluorite, barite, celestite and so on ; the rock alteration is slightly silicified, carbonated, baritizated, celestited, which is low - temperature alteration. because of continual downgoing extrusion from india plate to euro - asian plate, there are some thrusting nappe structures in lanping basin related to the orogens on the two sides

    礦床中礦石礦物發育典型的中低溫熱液成因的礦物組合，如黝銅礦系列、方鉛礦、黃銅礦等，脈石礦物主要為碳酸鹽類礦物、螢石、重晶石、天青石等；圍巖蝕變主要發育弱硅化、碳酸鹽化、重晶石化、天青石化等低溫蝕變組合。
  4. From the study of lanthanon, we know that quart - vein is the single production of hydro mineralization. etch rock and mineralized rock are the mix outcome of hydro mineralization and wall rock materials

    稀土元素研究結果反映石英脈是成礦流體的單純產物，而蝕變巖和礦化巖石則是成礦流體與圍巖物質的混合產物。
  5. Main content in simulation is the spatio - temporal evolution of the set of descriptive variables characterizing tectonic mineralization state under coupling of various processes as following : ( 1 ) variables related to forming and property of ore - forming fluid, such as dissolution rate of minerals ( include metal minerals ) in rock, concentration and saturation of aqueous species in fluid, temperature, pressure, and ionic strength etc. ; ( 2 ) variables related to structural deformation and fluid flow, such as stress, deformation rate, fracture network, porosity, fracture permeability ; ( 3 ) variables related to precipitation and mineralization, such as nucleation rate of gangue and metal minerals, accumulation precipitation of various minerals, etc. ; ( 4 ) spatio - temporal coupling relation of various variables above, such as the coupling relationship between spatio - temporal evolution of fracture permeability and flow and focus of fluid and ore - forming

    模擬的主要內容是在各種過程耦合作用下，以下描述構造成礦體系的主要變量的時空演化：與成礦流體的形成和性質有關的變量，如地層中礦物（包括成礦物質）的溶解速率、流體中各組分的濃度與飽和度、流體溫度、壓力、離子強度等；與構造變形和流體運移有關的各變量，如應力與變形速率、巖石孔隙度、構造（斷裂）滲透率等；與沉澱成礦有關的變量，如礦物（金屬礦物和脈石礦物）的成核速率、各礦物的沉澱量等；上述各有關變量間的時空耦合關系，如斷裂滲透率時空演化與流體流動、匯聚和成礦的耦合關系等。
  6. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
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