襯底漏電 的英文怎麼說
中文拼音 [chèndelóudiàn]
襯底漏電
英文
substrate leakage- 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
- 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
- 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
- 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
- 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
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We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay
0對倒相器的模擬結果表明：新型cmos數字電路結構結構使襯底電流降低約50 ，器件的熱載流子退化效應明顯改善而不會增加電路延遲；巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現，工藝簡單又無須增加晶元而積。In this paper, multilayered pt / bst / pt thin film capacitors were fabricated by the sol - gel process. both the reverse and forward leakage currents of the pt / bst / pt capacitors were reduced several orders of magnitude by employing this multilayered structure with top and bottom layers annealed at low temperatures during the sol - gel deposition of bst films
本文採用溶膠-凝膠法，通過降低最底層和最上層的退火溫度，在pt ti sio _ 2 si襯底上制備了非晶多晶型bst多層膜，不僅改善了正向漏電流特性，而且也改善了反向漏電流特性。
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