部分阻斷處理 的英文怎麼說

中文拼音 [fēnduànchǔ]
部分阻斷處理 英文
partial down processing
  • : Ⅰ名詞1 (部分; 部位) part; section; division; region 2 (部門; 機關或組織單位的名稱) unit; mini...
  • : 分Ⅰ名詞1. (成分) component 2. (職責和權利的限度) what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] (料想) judge
  • : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
  • : Ⅰ動詞1 (分成段) break; snap 2 (斷絕;隔斷) break off; cut off; stop 3 (戒除) give up; abstai...
  • : 處名詞1 (地方) place 2 (方面; 某一點) part; point 3 (機關或機關里一個部門) department; offi...
  • : Ⅰ名詞1 (物質組織的條紋) texture; grain (in wood skin etc ) 2 (道理;事理) reason; logic; tru...
  • 部分 : (整體中的局部或個體) part; section; portion
  • 阻斷 : block out
  1. Barrier cracks cannot stop the extending of a fracture, and the strength of the sample is reduced by almost one magnitude because of the existing barrier cracks. there are great differences of ae distribution between specimens with non - penetrate crack and specimens with penetrate crack. as for penetrate crack, ae occurs near the two end of the crack, and for non - penetrate crack, crack, ae occurs near the two end of the crack, and for non - penetrate crack, ae occurs near the front edge of crack, which can be explained well by the theory of 3 - d fracture ; ae distribution near the outer part of collinear crack is similar with that of the end of penetrate crack, and inner part of collinear cracks will run - through with high loads

    關于預制裂紋系對巖石破裂的影響,集中討論了:空障礙體構造不能止主裂紋的擴展,反而會使巖石的破裂強度降低近一個量級;由於構造的不同,非穿透切口樣品和穿透切口樣品的聲發射空間佈特點有本質區別,穿透切口樣品的微破裂在切口兩端發育,而非穿透切口樣品的微破裂在切口兩端之間切口前緣發育,這用三維破裂論可以很好地解釋;含共線構造的巖石,裂紋外端的聲發射佈與單裂紋構造中裂紋端的聲發射佈相似,裂紋內端聲發射有密集佈,在應力達到一定水平時,內端發生錯,而不是貫通。
  2. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來ge擴散通路,二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組,從而解決sige
  3. The ids works by two way, misuse detection and anomaly detection, misuse detection flags an intrusion on intrusion signature, this kind of detecting technic can be realized much more easily, and much more accurate, but it can not find some intrusiones that have been disguised or new kinds of intrusion. the anomaly detection can detect in more wide field, anomaly detection can compare new statistic data with average record, then anomaly record will be found, but it ' s more difficult to set a threshold, if the threshold is too big, some intrusion may be put through, if the threshold is too small, the ids will give more false positive alarm, and the threshold will be different with different people or different period, so the ids just simply show us their suspicious record, the administrator or expert will be in duty to analyze this record and give conclusion, the ids give more alarm than it should, leave us more detection record to analyze, and this is a hard work, we can not distinguish an intrusion or not if we analyze only one record, but we can judge if we find the relation among mass detection evidence. in this article, we try distinguish an intrusion using d - s theory ( proof theory ) instead using manual work, the ids will be more helpful and efficient

    濫用檢測採用的是特徵檢測的方法,實現較為簡單,判的準確性較高,但是不能判一些經過偽裝的入侵或特徵庫中尚未包含的入侵,異常檢測能夠根據以往記錄的特徵平均值,判出異常情況,但是對于異常到什麼程度才視為入侵,這個閥值非常難以確定,閥值設定的太高,有可能漏過真正的入侵,如果設定的閥值太低,又會產生較高的誤警率,而且這個閥值因人而異,因時而異,因此現在的入侵檢測系統把這異常記錄以一定的形式顯示出來或通知管人員,交給管人員去判,而這些ids系統難以判的記錄,如果對每個證據單獨地進行觀察,可能是難以判是否是入侵,而把許多先後證據關聯起來,專家或管人員根據經驗能夠判訪問的合法性,本文試圖引入人工智慧中證據論的推策略和示例學習方法,代替人工檢查析,可以提高效率,降低誤警率,並可以對一個正在進行得可疑訪問實現實時檢測,通過搜索及時判,及時非法訪問,比事後得人工更有意義。
  4. Based the basic principle of the accumulation of induced electric charges across the resistivity discontinuities and the induction current channeling inside the conductive bodies inspirited by the mt field, we set up the relation between the measured field on the earth surface and the distribution of the induced source underground by means of the defining the electric charge occurrence probability function and the electric dipole occurrence probability function and the spacial distributing of the " correlation probability ". the " image " of the field sources underground, or the distributing graphy of the induced electric charges and the induced current in the mesuring area can be drawed, from which we can get the outline of the geological anomaly on the meaning of the probability

    大地電磁場概率成像方法是一種新的地球物成像反演方法,它是根據在大電磁波場的激勵下,地下介質電率間產生感應電荷積累和導體內產生感應電流,從而產生感應電磁場的原,相應地定義了感應電荷發生概率函數和感應電偶極子發生概率函數,通過「相關概率」發生的大小的空間佈,建立了地表觀測場與地下場源空間佈的內在聯系。地下場源佈概率的「像」 ,即測區的感應電荷和感應電流的概率的布圖像,就是測區內地質體在概率意義下地質異常體的佈輪廓。
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