氮化硅英文怎麼說

氮化硅 的英文翻譯

氮化硅 例句

1. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited
   本工作採用螺旋波等離子體 化 學氣相沉積（ hwp - cvd ）方法制備了氫 化 非晶 氮化硅 （ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
2. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
   用納米壓入法對（ 100 ）單晶 硅 及（ 110 ）單晶 硅 、多晶 硅 薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準 氮化硅 薄膜、低應力 氮化硅 薄膜、 氮 化 鋁薄膜、氧 化 鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶 硅 在壓入過程中觀測到的兩個力學相的變 化 。
3. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball
   結果表明：在相同的研磨條件下，具有長柱狀晶粒的 氮化硅 陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧 化 鋯和氧 化 鋁陶瓷球表面質量次之，碳 化 硅 陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
4. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
   用sims分析結合器件直流特性測試，比較了在不同條件下淀積的 氮化硅 對gaas硫鈍 化 表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍 化 效果的影響。
5. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )
   通過矽片在800到1200各個溫度和各種 氮 氣氣氛下的 氮 化 處理的實驗結果，報道了不同與其他研究者的 氮 化 條件，矽片在 氮 氣保護的熱處理中的 氮 化 條件為：高於1100的溫度和高純 氮 的氣氛條件，同時對該 氮化硅 薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧 化 性等測試和分析。

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