重摻雜區英文怎麼說

重摻雜區 的英文翻譯

重摻雜區 例句

1. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
   導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合 區 域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的 摻 入顯著影響了oled的光電性能，當balq3的 摻 雜 濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中 摻 雜 npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
2. The n / n + and p / p + epitaxial structures, which become popular with the development of coms technology, because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
   Coms工藝中普遍採用n / n ~ + 、 p / p ~ +的外延結構，這種以 重 摻 雜 矽片為襯底的外延結構與內吸 雜 工藝相結合，是解決集成電路中的閂鎖效應和粒子引起的軟失效的有效途徑。
3. According to our theoretic analysis and the realistic fabricating condition, the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2. 5 ghz, half - wave voltage about 5v, extinction - ration less than - 40db, transmission loss of tm mode greater than 45db and transmission of te mode less than 0. 15db. to obtain higher switching speed, we proposed that traveling - wave electrode is applied to boa device
   我們選擇在sigaas襯底上生長 重 摻 雜 層，通過控制其厚度來設計速度匹配的boa光開關行波電極，實現boa光開關的高速和高帶寬，本文結合boa型光開關的特點提出一種行波電極型boa光開關結構，其理論3db調制帶寬大於20ghz 。
4. In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
   新結構用三 重 擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕 摻 雜 p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基 區 ）的優點。
5. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
   結果顯示，對于普通輕 摻 矽片能形成明顯的很寬的潔凈 區 的rtp預處理工藝，應用於 重 摻 硼樣品時沒有潔凈 區 形成，所以rtp預處理獲得潔凈 區 的工藝不適用於 重 摻 硼矽片，硼的大量 摻 雜 對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉 重 摻 硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加 重 摻 硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。

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