質變摻雜 的英文怎麼說

中文拼音 [zhíbiànchānzá]
質變摻雜 英文
transmutation doping
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質變 : [哲學] qualitative change
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. In this paper, oxid crystals were synthesized by the hydrothermal method, and the effects of the hydrothermal condition on shape and quality of crystal were studied by changing experimental temperature and mineralizer. on the base of these works the blue sapphire dopped with fe, ti and sapphire dopped with ti were synthesized. meantime, the effects of ti, fe - dopped on sapphire and what lead to the blue of sapphire were studied

    本文採用水熱法合成了- al _ 2o _ 3和zno晶體，通過改變溫度和礦化劑條件研究了水熱條件下溫度和礦化劑對- al _ 2o _ 3和zno晶體合成的影響；在此基礎上通過摻雜致色元素，合成了藍色藍寶石、鈦藍寶石，並研究了fe 、 ti等致色離子對藍寶石晶體界面形態和質量的影響，分析了藍寶石的致色原因。
  2. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  3. The results indicate that the samples ( cas : eu, sm srs : eu, sm and casrs : eu, sm ) are all facial cubic structure

    改變稀土摻雜種類制備了cas ： ce石和cas ： yb三ffi樣品，改變基質種類制備了k 。
  4. The binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field using effective mass approximation and variation method have been discussed

    利用有效質量近似、變分法，研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能。
  5. The aging properties of lead metaniobate piezoelectric ceramics have been investigated. the result indicated that the additives accumulate in grain boundary caused the material having good aging properties

    對偏鈮酸鉛壓電陶瓷的老化性能作了一些探討，實驗表明，摻雜改性后的偏鈮酸鉛顯微結構發生了變化，晶界處有雜質分凝使得該材料老化性能好。
  6. The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios

    在這個異質結中， n型重摻雜3c - sic層的厚度為1 m ， p型輕摻雜sicge層厚度為0 . 4 m ，二者之間形成突變異質結。
  7. One is about of temperature - dependence of luminescence of eu3 + and tb3 + doped in oxide glass and nanocrystalline y2o3 ; the other is about of light - induced luminescent and structural change in nanocrystalline y2o3 : tb. the creative works are as follows : ( 1 ) euand tb doped nanocrystalline y2o3 with different sizes were prepared by combustion synthesis. dependences of particle size, crystallinity and fluorescence characteristic on ratio of gly / y ( no3 ) 3 and annealing temperature were studied

    本文以變溫與光輻照為實驗方法研究了eu與tb摻雜y _ 2o _ 3納米晶及氧化物玻璃中發光性質隨溫度的變化關系和光誘導y _ 2o _ 3 ： tb納米晶發光性質及結構的改變過程，得到如下創新性研究成果： （ 1 ）用燃燒法制備了稀土摻雜y _ 2o _ 3納米晶，研究了甘氨酸與硝酸釔的反應比例（ g n ） 、退火條件對稀土摻雜y _ 2o _ 3納米晶顆粒尺寸、結晶狀況及發光特性的影響。
  8. On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface

    本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
  9. Three series of absorbent powder samples were synthesized by the high - temperature solid - state method : the first is that fe / ti mol proportion in the material changes regularly ; the other one is that different thuliums doped in the same absorbent ; the last series is the absorbent was doped by different content thulium. the permittivity and permeability of the modified ilmenite absorbents were systematically measured

    通過使原料中金屬離子的摩爾比例（ fe ti ）作有規律變化、在同一基質中摻雜同含量的不同稀土金屬以及改變同種稀土金屬的摻雜量等手段，採用高溫固相合成法制備了不同系列可供進行吸波性能研究的鈦酸亞鐵類化合物吸收劑。
  10. The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type. the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon

    本論文的主要內容和結果如下: （ 1 ）借用「熱中子輻照矽片使部分硅嬗變為磷，從而將硅摻雜成n型」的思想，從質子嬗變角度討論了實現zno材料的p型摻雜方案。
  11. The researching results indicate that using the two kinds of novel structure, the fast - switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop, and the temperature characteristic is improved, too. most of the characteristics are far better than the normal pin diode structures

    研究結果表明，在採用?基區漸變摻雜和臺面結構后的p ~ + （ sige ） - n ~ - - n ~ +異質結中，我們得到了更快而軟的反向恢復特性，和更低通態壓降的正向導通特性，且溫度特性也有明顯改善。
  12. A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes

    摻雜質，摻質劑加入純半導體材料中的少量硼等物質，用於晶體管和二極體中以改變半導體的導電率
  13. On the base of the study on si / sige hetero - junction fast switching power diode, two kinds of novel structure of sige / si pin diode are proposed in abstract this paper. the one is the gradual changing doping concentration in the n - region, and the other is sige pin diode with mesa structure

    本文在對sige si異質結快速開關功率二極體的研究基礎上，提出了兩種sige si快速開關功率二極體的新結構： ?基區漸變摻雜型sige異質結開關功率二極體和臺面結構sige異質結開關功率二極體。
  14. The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films

    ，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。
  15. In this articles, we research the all - solid state electrochromic device which ec layer is wo3 doped with tio2 moo3 cro3 peo, ce layer is ceo2 doped with tio2, and ic layer is epichlorohydrin crosslinked polyethenoxy ether gel macro - molecule electrolyte. in this articles, we research the color change, responding time, electrochemistry performance, preserving time, and lay importance on the research in the circle times, crystal structure and the uniformity, stability and suitable viscosity of precursors

    本文首次研究了wo _ 3以為主體， tio _ 2 、 moo _ 3 、 cro _ 3 、 peo摻雜的電致變色層的性能，以tio _ 2為主體的對電極變色層的性能和以liclo _ 4 -環氧氯丙烷交聯聚氧乙烯醚為高分子固體電解質的全固態電致變色器件。
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