普通圖片 的英文怎麼說

中文拼音 [tōngpiān]
普通圖片 英文
general graphic
  • : Ⅰ形容詞(普遍; 全面) general; universal Ⅱ名詞(姓氏) a surname
  • : 通量詞(用於動作)
  • : Ⅰ名詞1 (繪畫表現出的形象; 圖畫) picture; chart; drawing; map 2 (計劃) plan; scheme; attempt 3...
  • : 片構詞成分。
  • 普通 : common; general; ordinary; plain; honest; private; trile; average
  1. Airbrush : most used in normal mode for loose shading and in color mode for applying colour

    油漆噴槍:常用於模式下對像進行粗糙的陰影描繪,在色彩模式下對上色。
  2. A patch antenna with air holes in the substrate has been designed. the finite - difference time - domain ( fdtd ) method together with the perfectly matched layer ( pml ) boundary treatment has been used to study the performance of the antenna. it is shown that the surface waves are significiently suppressed, the frequency bandwidth is improved, the sidelobe levels are reduced and consequently the gain in the forward direction is improved by 14 db ( about 4 db higher than the value reported previously )

    設計了一種基底鉆周期圓孔結構的電磁(光子)晶體貼天線,用fdtd方法並結合pml吸收邊界條件對該天線進行了研究,結果表明本文所設計的基底鉆孔型電磁晶體貼天線取得了多方面的性能改善,與天線相比,基底中的表面波受到很大抑制,天線的帶寬增加,遠場方向上天線的旁瓣和背瓣被明顯削弱,向前輻射的增益由原來的12db增加到26db ,增加了14db ,比文獻上報道的gonzalo等人的研究結果提高了4db 。
  3. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與化學腐蝕相比,可以有效地消除晶體取向影響,製作出更加多樣化的腐蝕形;與激光誘導氣相腐蝕相比,其工藝條件更加容易實現,操作更加簡單;與干法離子刻蝕相比,對基無離子損傷,過度腐蝕容易控制,成本低。
  4. The performance of the pbg antenna using the new pbg cover together with a pbg substrate is studied by the fdtd method together with the pml boundary treatment. the numerical results show that a more focused beam radiated in the broadside direction is achieved. the gain of the pbg patch antenna in the forward direction is improved by about 6 db. the radiation directivity is improved significantly and reaches 11. 5 db, which is 0. 4 db less than the maximum value that is allowed physically for this size of the antenna ( this difference is about 4. 1 db less than the difference achieved by thevenot et al.,

    用fdtd方法並結合pml吸收邊界條件,我們對加了這種新的覆層結構並且基底鉆孔的復合結構電磁(光子)晶體貼天線的性能進行了研究,結果證明加了這種新的電磁晶體覆層結構以後,天線的波束收攏很多,並且向前輻射的增益大大提高,與天線相比,天線的e面和h面方向上向前輻射的增益均提高了約6db ,另外,該復合結構天線的方向性系數達到了11 . 5浙江大學博士學位論文db ,與該物理尺寸天線的方向性系數的理論極限值( 11 . 9db )相差0 . 4db ,該差值比thevenot等人設計的電磁晶體覆層天線的相應差值減少了約4 . 1db ,比qiu等人設計的電磁晶體天線的相應差值減少了約1
  5. The structure of circuit are highly integrated. it not only has a simple structure, but obtains a more high frequency of signal processing than the circuit based on singlechip. ( the highest working frequency of sinlechip circuit is about 12m while this system almost reach 50m ) a higher speed of signal processing ensure the system achieve a better display quality

    本系統將pld晶元設計成系統信號驅動的控制晶元,實現了電路結構的高度集成化,不僅結構簡單,而且信號處理的頻率大大高於單機電路(機電路最高工作頻率為12m左右,而本系統控制晶元達到50m以上) ,更快速的信號處理速度保證了系統產生更優良的像質量。
  6. You can choose whether to see your slides in normal view, zoom in on your slide, or look at a grouping of miniature slides

    可以選擇在中查看幻燈、放大幻燈或查看分組的幻燈
  7. Normal view combines slide, outline, and notes views into one, making it much easier to edit slides and notes in context

    將幻燈、大綱和備注三個視組合在一起,使作者更容易在上下文中編輯幻燈和注釋。
  8. The parametrization three - dimensional construction drawing and engineering drawing of new - style three - disk - cycloid - driving were established on the basis of the precise force analysis and optimization design of the parameters of new - style three - disk - cycloid - driving ; the design and experimental verification of sfa45 - 59

    本文過對三擺線輪新型針擺傳動系列精確的受力分析,強度校核及參數的優化設計,研製了sfa45 ? 59型樣機並且過了試驗驗證,從而建立了整個系列的參數化設計三維庫和工程庫。
  9. This smart power ic can be fabricated by normal cmos process. some details of the design, layout, tape - out and test are described in the main text

    該晶元屬于智能功率集成電路( spic ) ,採用與cmos兼容的工藝,完成了從電路設計,版繪制到投,測試等工作。
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