晶體光缺陷 的英文怎麼說

中文拼音 [jīngguāngquēxiàn]
晶體光缺陷 英文
optical defects of crystals
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : Ⅰ動詞1 (缺乏; 短少) be short of; lack 2 (殘缺) be missing; be incomplete 3 (該到而未到) be ...
  • : Ⅰ名詞1 (陷阱) pitfall; trap2 (缺點) defect; deficiency Ⅱ動詞1 (掉進) get stuck or bogged do...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ ( ag )腐蝕液的配方的基礎上,研製了新的腐蝕液,可方便、快速、有效的顯示czt不同面的蝕坑形貌;研究了利用激正反射法和自然解理的不同( 110 )面之間的關系,方便、快速、準確的進行定向切割的方法;採用生長的czt單自然解理的( 110 )面,經過表面處理,試制了探測器元件,對24lam有較強的響應。
  2. Performance investigation of photonic crystal with flawed and nonperiodic structures

    和變周期結構特性研究
  3. The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched

    採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法,並首次採用正電子湮沒壽命譜分析方法來研究czt單的空位,綜合表徵了所生長的的質量和性能。
  4. Effect of structure and defect on photonic band gap of 2d photonic crystal

    二維結構和子禁帶的影響
  5. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made

    本文的主要內容就是研究退火過程中cd _ ( 1 - x ) zn _ xte內富te相的形態、大小的變化及其對、電性能的影響,並通過化學計算,結合實際的退火實驗,制定相應的退火工藝,改善性能。
  6. Using the transfer - matrix - method simulation, the transmission spectrum in such one dimensional ( 1 - d ) systems including three defects is calculated, and the influence of the interaction between defects on defect modes is discussed

    利用傳輸矩陣方法計算了含有3個負折射率的一維的透射譜,討論了間的相互作用對模的影響。
  7. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過吸收、、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後學性能和形態變化,以及ni ~ +注入對不同摻雜單al _ 2o _ 3結構和學性能的影響,得到以下結果: ( 1 ) ysz注量達到10 ~ ( 16 ) cm ~ ( - 2 )時,開始出現由f型和v型色心重疊而產生的吸收帶,與x射線、中子輻照相比,重離子輻照產生了更為復雜的復合而導致吸收峰紅移。
  8. By measuring the ultraviolet - light - induced absorption coefficeint change, we believed that the ultraviolet - light induced absorption changes were ascribed to the generation of the small polarons o ( superscript - ) under the illumination of uv lights

    通過對不同組份摻鎂鈮酸鋰紫外致吸收的動態暗衰減過程的測量,我們認為摻鎂鈮酸鋰中紫外致吸收的淺能級中心是o (上標- )小極化子。
  9. Growth defects of optical crystals and their analysis techniques

    的生長及分析方法
  10. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的,並採用譜儀檢測分析等離子的可見譜以監測微波等離化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  11. Investigation on the bandwidth and quality factor of the defect mode in a photonic crystal with a defect

    模的帶寬與品質因子研究
  12. The distribution coefficient of re3 + ( nd3 + and yb3 ) , the refractive index and the crystal lattice were tested. through the measured data of absorption spectrum, fluorescence spectrum and fluorescence lifetime, the spectral characteristic parameters of ( nd3 +, yb3 + ) : yp0. 1v0. 9o4 crystals were calculated and contrasted, and the advandages of them have been showed

    通過測試各的吸收譜、熒譜和熒壽命,分析了摻不同濃度nd3 + 、 yb3 +離子激譜特性,對比研究了以yv0 . 9p0 . 1o4作為基質所具有的優越性和
  13. By studying the luminescence mechanism and the optical spectra, the two reasons for the diminish of light yield are given : the absorption of the fluorescence by the point defects when that produced and the scatter of the fluorescence by the macroscopic defects when that transmitting. in ce : yap scintillators, the available approach to improve the light yield is to diminish the self - absorption of the point defects

    通過譜分析和對發機制的研究,指出在產生熒輻射過程時中的點對熒的吸收以及熒收集過程中宏觀對熒的散射是造成產額減小的原因,通過減小是提高產額的有效途徑。
  14. Much effort has focused on eliminating these unwanted defects from the self - assembled material, and extremely ordered photonic bandgap crystals have been made. however people ca n ' t control the defect during the self - assembling

    在本方法的基礎上利用鑷技術對產生的進行修復以及對生成的進行修整,從而達到去除的目的,生成大面積無的的三維
  15. Self - assembly mechanism and defect analysis of colloidal silica photonic crystals

    二氧化硅自組裝機理及分析
  16. Since 1987, many researchers have been engaged in the realization of photonic bandgaps, localized defect modes, and other optical properties peculiar to the photonic crystals. because photonic crystals are artificial crystals, it is our studing issue to design and fabricate the photonic crystals. many accurate numerical calculations could be performed thanks to the development of computing facilities. these calculations were really useful for the design of the photonic crystal structures

    自從1987年以來,許多研究人員試圖去實現中的子頻率帶隙和局域模以及其它一些學特性。由於是人造,因此設計和製成,就成了研究的焦點。
  17. There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect

    中的子與一般(電子)中的電子相似,都有能帶結構,都會因為有雜質和態的存在而存在局域態。
  18. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導薄膜和學薄膜,而這個領域的開發在很大程度上依賴于高取向和單金剛石薄膜以及大面積透明金剛石膜的獲得,但由於金剛石膜生長過程中的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取,從而導致金剛石膜的取向發生改變,使高取向和單金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  19. The defect states of the multi - periods of photonic crystal filter for wavelength division multiplexed

    用於波分復用的態復周期結構濾波器的研究
  20. These reveal that the defect of the amorphous photonic material have the same property as the defect of a periodic photonic crystal for the case of strong energy localization, furthermore the defect modes in the amorphous photonic materials are riche than in the periodic photonic crystal

    這表明非子材料中形成的模不僅具有周期性模的強局域化特徵,而且模更富於變化。
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