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晶體光缺陷英文怎麼說

晶體光缺陷 的英文翻譯

晶體光缺陷 英文 optical defects of crystals 晶 : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance 體 : 體構詞成分。 光 : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ... 缺 : Ⅰ動詞1 (缺乏; 短少) be short of; lack 2 (殘缺) be missing; be incomplete 3 (該到而未到) be ... 陷 : Ⅰ名詞1 (陷阱) pitfall; trap2 (缺點) defect; deficiency Ⅱ動詞1 (掉進) get stuck or bogged do... 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish

晶體光缺陷 例句

  1. The approximation analysis result of band dipole model is obtained on the basis of the theory of mfl. the electromagnetic distribution feature of the defect in the steel panel is studied by means of simulation. the leakage magnetic distribution of the two defects and four defects plural and the defects in the column differently in the width are also assayed. conclusions that factors affecting flaw magnetic leakage to the panel also affect the column and magnetic leakage bx should be the feature of the flaw identification to several flaws are drawn
    在對漏磁檢測原理進行詳細介紹的基礎上,得出了帶偶極子模型的近似解析解,並以有限元數值模擬分析為主要手段,以鋼板上 缺 陷 為對象,分析了各因素對 缺 陷 漏磁場產生影響的不同規律,同時模擬分析了板上平行的兩條裂紋,四條裂紋以及柱 體 上寬度不同時的裂紋的漏磁場分佈特徵,得出結論:影響板上 缺 陷 漏磁場的諸因素會對柱 體 上 缺 陷 漏磁場產生同樣的影響;對于多條裂紋,宜用漏磁分量bx作為 缺 陷 識別的特徵量。
  2. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed
    在改變e _ ( ag )腐蝕液的配方的基礎上,研製了新的腐蝕液,可方便、快速、有效的顯示czt不同 晶 面的 缺 陷 蝕坑形貌;研究了利用激 光 正反射法和自然解理的不同( 110 )面之間的關系,方便、快速、準確的進行定向切割 晶 體 的方法;採用生長的czt單 晶 體 自然解理的( 110 )面,經過表面處理,試制了探測器元件,對24lam有較強的響應。
  3. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes
    本文就是在此背景下,利用金屬波導和單軸 晶 體 的一些特性,結合麥克斯韋方程組和波導的邊界條件,從三種不同的情況研究了 光 在對稱平面單軸 晶 體 金屬波導(波導層是單軸 晶 體 ,兩個波導界面均為金屬)內的傳輸特性,其主要貢獻為,首次解析地得到了這種波導結構下模式場的精確解,並發現了一些有用的特性: ( 1 )模式場的性質因單軸 晶 體 的性質不同而異; ( 2 )當單軸 晶 體 光 軸位於波導界面法方向與傳輸方向構成的平面內時,波導中傳輸te波和tm波,只不過其主模因單軸 晶 體 的性質不同而異,當波導層介質為負單軸 晶 體 時,波導主模是te波主模,而波導層介質為正單軸 晶 體 時波導主模是tm波主模。 ( 3 )當單軸 晶 體 光 軸位於波導面內時,對于正單軸 晶 體 ,波導的主模是橫電波te _ 0模,任何頻率的 光 波均可激勵該模式;當 光 波波長滿足一定條件時,波導內傳輸單模,否則,將激勵起高階模式,高階模即匪te波,也匪tm波,而是兩者耦合而成的混合模。
  4. Defect location, representative defect and its ultrasonic echo characteristics corresponding of tungsten alloy shells had been systematically studied by both vertical wave sensors and transverse wave sensors calibrated after manufacturing
    摘要採用縱波直探頭和自磨製經校準的斜楔橫波探頭,對鎢合金殼 體 部件進行了檢測,並對鎢合金殼 體 的 缺 陷 定位、典型 缺 陷 及其對應的回波特徵進行了研究。
  5. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made
    本文的主要內容就是研究退火過程中cd _ ( 1 - x ) zn _ xte 晶 體 內富te相的形態、大小的變化及其對 晶 體 光 、電性能的影響,並通過 缺 陷 化學計算,結合實際的退火實驗,制定相應的退火工藝,改善 晶 體 性能。

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